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The SB10H150CT-1E3/45 is a dual common-cathode high-voltage Schottky rectifier manufactured by Vishay General Semiconductor. It features a maximum repetitive peak reverse voltage of 150 V and an average forward rectified current of 2 x 5 A per diode. The device exhibits a low forward voltage drop of 0.72 V at 5.0 A and a typical leakage current of 5.0 μA at working peak reverse voltage. Designed for TO-262AA (TO-262) surface-mount packaging, it supports a junction temperature range of -65 to +175 °C and includes guardring technology for overvoltage protection.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and compliance status. Confirm that the E3 suffix aligns with required consumer grade specifications and whisker test standards. Ensure the TO-262AA package variant matches the intended PCB footprint requirements before finalizing procurement orders.
Select this component for designs requiring high-voltage Schottky rectification in surface-mount configurations. Evaluate thermal management strategies based on the specified thermal resistance characteristics. Consider the 150 V rating and 10 A total current capacity when sizing components for power conversion stages. Validate junction temperature limits under expected operating conditions.
This part belongs to the SB10H150CT series of dual common-cathode Schottky rectifiers from Vishay. It shares electrical characteristics with the MBR10H150CT and MBRF10H150CT models but utilizes a distinct TO-262AA surface-mount package. The series is engineered for applications demanding low leakage and high reliability in compact form factors.
MBR10H150CT-E3/45
The maximum repetitive peak reverse voltage is 150 V.
Yes, the device incorporates a guardring structure specifically designed for overvoltage protection.
The typical maximum reverse current per diode at working peak reverse voltage is 5.0 μA at 25 °C.