SBC846BDW1T1G-M01

Overview

The SBC846BDW1T1G-M01 is a dual NPN bipolar junction transistor (BJT) array manufactured by onsemi. It integrates two independent NPN transistors within a single SOT-363 surface-mount package, designed for low-power applications. The device features a maximum DC collector current of 100 mA and a collector-emitter voltage rating of 65 V. Key electrical parameters include a collector-base voltage of 80 V, an emitter-base voltage of 6 V, and a minimum DC current gain (hFE) of 200. The component supports a maximum power dissipation of 380 mW and operates within a temperature range of -55°C to +150°C.

Feature Summary

• Dual NPN configuration in a compact SOT-363 package for space-constrained designs
• Automotive qualification compliant with AEC-Q101 standards
• High DC current gain suitable for general-purpose amplification

Applications

• General-purpose amplifier circuits
• Switching applications in automotive electronics
• Low-power signal processing modules

Procurement Notes

Verify the specific suffix M01 against official manufacturer documentation to confirm pinout compatibility and functional equivalence with standard SBC846BDW1T1G variants. Ensure sourcing channels provide valid traceability records for automotive-grade components. Confirm RoHS compliance status through official datasheets before integration into regulated assemblies.

Selection Notes

Select this component when dual NPN switching or amplification is required in a minimal footprint. The SOT-363 package offers thermal and mechanical advantages over discrete single transistors. Consider the 65 V breakdown voltage and 100 mA current limits to ensure operation within safe operating areas for the target application environment.

Part Context

This part belongs to the BC846B series of dual general-purpose transistors. It shares core electrical characteristics with the BC846BDW1T1G but may feature specific manufacturing site identifiers or packaging variations indicated by the suffix. The series is widely used in consumer and automotive electronics requiring reliable small-signal performance.

Replacement Considerations

Direct substitutes include BC846BDW1T1G and other SOT-363 dual NPN transistors with matching voltage and current ratings. Verify pinout alignment and hFE binning requirements before substitution. Alternative packages such as SC-88 require careful layout adjustments.