SBC847BPDW1T1G

Overview

The SBC847BPDW1T1G is a dual general-purpose NPN/PNP transistor pair from onsemi, housed in an SOT-363 (SC-88) surface-mount package. It features a maximum collector-emitter voltage of 45 V for the NPN and -45 V for the PNP section, with a continuous collector current rating of 100 mA. The device includes an 'S' prefix indicating AEC-Q101 qualification and PPAP capability for automotive applications. Electrical characteristics specify a minimum DC current gain (hFE) of 200 at 2 mA and 5 V, with a transition frequency (fT) of 100 MHz. Total power dissipation is rated at 380 mW, and it operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Automotive-grade qualification with AEC-Q101 standards and PPAP capability
• Complementary NPN and PNP transistors integrated in a single compact package
• Lead-free, halogen-free, and BFR-free construction compliant with RoHS directives

Applications

• General purpose amplifier circuits
• Low power surface mount applications
• Automotive electronic systems requiring unique site control changes

Procurement Notes

Verify the specific ordering suffix to confirm tape and reel specifications, including part orientation and tape sizes, as detailed in the Tape and Reel Packaging Specification Brochure BRD8011/D. Ensure the component matches the required AEC-Q101 qualification level if used in automotive contexts. Confirm that the Pb-Free indicator or microdot marking aligns with the datasheet requirements for environmental compliance.

Selection Notes

Select this component when a complementary NPN/PNP pair is required in a minimal footprint SOT-363 package. The BC847 variant provides a 45 V breakdown voltage, suitable for low-voltage signal processing. Consider the specific saturation voltage characteristics defined for the SBC847BPDW1T1G, which differ slightly from standard BC847 devices, particularly at lower current levels.

Part Context

This device belongs to the BC846BPDW1, BC847BPDW1, and BC848CPDW1 series of dual general-purpose transistors. The 'S' prefix denotes a specific manufacturing site and control change process tailored for automotive and other applications requiring strict quality management protocols. It shares the same physical package and basic electrical topology as the non-S prefixed variants but carries additional automotive certification.

Replacement Considerations

BC847BPDW1T1G