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The SBC847BPDW1T3G is a dual general-purpose transistor containing complementary NPN and PNP elements in an SC-88 (SOT-363) surface-mount package. It features a collector-emitter voltage of 45 V, continuous collector current of 100 mA, and DC current gain ranging from 200 to 475. The device operates within a junction temperature range of -55°C to +150°C, dissipates up to 380 mW, and has a transition frequency of 100 MHz. It is AEC-Q101 qualified, Pb-free, and supplied in a 10,000-unit tape and reel.
Verify the ordering suffix T3G corresponds to the 10,000-unit tape and reel packaging format. Confirm that the S prefix indicates compliance with AEC-Q101 qualification standards and PPAP capability requirements. Ensure the component meets RoHS and halogen-free specifications as documented in the manufacturer datasheet.
Select this component when a complementary NPN/PNP pair is required in a compact SC-88 footprint. The 45 V rating suits moderate voltage switching tasks. Verify that the 100 mA continuous current limit and 380 mW thermal dissipation meet the circuit's power requirements under expected operating temperatures.
This part belongs to the BC846/BC847/BC848 series of dual general-purpose transistors. The SBC847 variant specifically provides a 45 V breakdown voltage, distinguishing it from the 65 V BC846 and 30 V BC848 models. All share the same SC-88 package and functional architecture.
Publicly confirmed substitutes include BC847BPDW1T1G and BC847BPDW1T2G. These variants offer identical electrical characteristics but differ in packaging quantity or specific manufacturing lot controls.