SBC847CDW1T1G

Overview

The SBC847CDW1T1G is a dual NPN bipolar junction transistor manufactured by onsemi, housed in a surface-mount SOT-363-6 package. It features a maximum DC collector current of 100 mA and a collector-emitter voltage (VCEO) of 45 V. The device supports a collector-base voltage (VCBO) of 50 V and an emitter-base voltage (VEBO) of 6 V. Power dissipation is rated at 380 mW, with a transition frequency (fT) of 100 MHz. The DC current gain (hFE) ranges from a minimum of 200 to a maximum of 450 at 2 mA and 5 V. Operating temperatures span from -55°C to +150°C, and the component holds AEC-Q100 qualification.

Feature Summary

• Dual NPN configuration within a compact six-pin SOT-363 surface-mount package for space-constrained designs.
• High DC current gain ranging from 200 to 450, suitable for general-purpose amplification tasks.
• AEC-Q100 qualified for automotive electronics reliability standards.
• Wide operating temperature range extending up to +150°C junction temperature.

Applications

• General-purpose signal switching and amplification circuits.
• Automotive electronic systems requiring AEC-Q100 compliant components.
• Low-power digital logic interfacing and level shifting.

Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm pinout compatibility and electrical tolerances. Ensure the source provides valid traceability records and confirms RoHS compliance status prior to integration into production schedules.

Selection Notes

Select this component when a dual NPN topology is required in a small outline package. Compare hFE bins and power dissipation limits against single-transistor alternatives if higher individual channel performance is needed. Confirm thermal management capabilities align with the 380 mW rating in the target enclosure.

Part Context

This part belongs to the BC847BDW1 series of dual transistors. It shares the same physical footprint and basic voltage ratings as other variants in the family but differs in current gain specifications. The 'C' designation typically indicates a tighter or higher gain bin compared to 'B' variants within the same package type.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided reference data. Verify cross-references using official manufacturer substitution guides to ensure electrical and mechanical compatibility before implementation.