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The SBC856BDW1T1G is a dual PNP bipolar junction transistor (BJT) from onsemi, housed in an SOT-363 surface-mount package. It features a collector-emitter voltage of -65 V and a continuous collector current of -100 mA. The device includes two independent transistors with a DC current gain ranging from 220 to 475 at -10 mA. It operates within a temperature range of -55°C to +150°C and has a total power dissipation of 380 mW.
Verify the specific ordering suffix 'DW1T1G' against official documentation to confirm the 3,000-unit tape and reel packaging quantity. Ensure the component meets RoHS compliance requirements for your manufacturing process. Confirm that the AEC-Q101 qualification aligns with your automotive supply chain specifications before finalizing procurement orders.
Select this component when a dual PNP transistor is required for space-constrained designs. The SOT-363 package offers a small footprint suitable for dense PCB layouts. Consider the -65 V breakdown voltage and -100 mA current limits to ensure adequate headroom for your specific circuit operating conditions and thermal management strategy.
This part belongs to the BC856/SBC856 series of general-purpose transistors. It shares the same electrical characteristics as the non-automotive BC856BDW1T1G but carries the 'S' prefix to denote automotive qualification and specific site control requirements. It is distinct from the BC857 and BC858 variants which have lower voltage ratings.
The BC856BDW1T1G serves as the commercial equivalent. For direct pin-compatible replacements, verify other manufacturers' dual PNP transistors in SOT-363 packages with matching -65 V and -100 mA ratings.