SBC856BDW1T1G

SBC856BDW1T1G

$0.21
  • Description:TRANS 2PNP 65V 100MA SC88/SC70
  • Series:-

SKU:5342c3d55a99 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2PNP 65V 100MA SC88/SC70
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 PNP (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):65V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:220 @ 2mA, 5V
  • Power - Max:380mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:Automotive
  • Qualification:AEC-Q101

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SBC856BDW1T1G

Overview

The SBC856BDW1T1G is a dual PNP bipolar junction transistor (BJT) from onsemi, housed in an SOT-363 surface-mount package. It features a collector-emitter voltage of -65 V and a continuous collector current of -100 mA. The device includes two independent transistors with a DC current gain ranging from 220 to 475 at -10 mA. It operates within a temperature range of -55°C to +150°C and has a total power dissipation of 380 mW.

Feature Summary

  • Automotive-grade qualification under AEC-Q101 standards
  • Dual PNP configuration in compact SOT-363 package
  • Lead-free and halogen-free construction

Applications

  • General purpose amplifier circuits
  • Low power surface mount applications
  • Automotive electronic systems requiring unique site control

Procurement Notes

Verify the specific ordering suffix 'DW1T1G' against official documentation to confirm the 3,000-unit tape and reel packaging quantity. Ensure the component meets RoHS compliance requirements for your manufacturing process. Confirm that the AEC-Q101 qualification aligns with your automotive supply chain specifications before finalizing procurement orders.

Selection Notes

Select this component when a dual PNP transistor is required for space-constrained designs. The SOT-363 package offers a small footprint suitable for dense PCB layouts. Consider the -65 V breakdown voltage and -100 mA current limits to ensure adequate headroom for your specific circuit operating conditions and thermal management strategy.

Part Context

This part belongs to the BC856/SBC856 series of general-purpose transistors. It shares the same electrical characteristics as the non-automotive BC856BDW1T1G but carries the 'S' prefix to denote automotive qualification and specific site control requirements. It is distinct from the BC857 and BC858 variants which have lower voltage ratings.

Replacement Considerations

The BC856BDW1T1G serves as the commercial equivalent. For direct pin-compatible replacements, verify other manufacturers' dual PNP transistors in SOT-363 packages with matching -65 V and -100 mA ratings.

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