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The SBC857CDW1T1G is a dual general-purpose PNP transistor from onsemi, housed in an SOT-363 surface-mount package. It features a collector-emitter voltage of -45 V and a continuous collector current of -100 mA. The device meets AEC-Q101 standards for automotive applications. Electrical characteristics include a DC current gain (hFE) ranging from 220 to 475 at -10 mA, and a transition frequency (fT) of 100 MHz. Thermal dissipation is rated at 380 mW per device, with an operating temperature range spanning from -55°C to +150°C.
Verify the component marking '3G' against the official datasheet to confirm authenticity. Ensure the ordering suffix matches the specific hFE binning required for the application. Confirm compliance with RoHS and halogen-free specifications during procurement. Validate that the supplier provides traceability documentation consistent with AEC-Q101 qualification requirements.
Select this component when a dual PNP configuration is needed in a compact SOT-363 footprint. Consider the -45 V collector-emitter voltage rating for circuit design limits. Evaluate the hFE range of 220 to 475 for gain requirements. Verify thermal management capabilities within the specified junction temperature range.
This part belongs to the BC857BDW1T1G/SBC857BDW1T1G series, which includes complementary NPN types like the BC847. The 'S' prefix indicates automotive qualification and unique site control. It shares the SOT-363 package with other dual transistor variants in the family.
Direct substitutes include BC857CDW1T1G and SBC857CDW1T1G from onsemi. Other manufacturers offer equivalent dual PNP transistors in SOT-363 packages, but verify pinout compatibility and electrical parameters before substitution.