SCS205KNTRL

$4.78

Description：1200V, 5A, SMD, SILICON-CARBIDE
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:bd702a34c064 Category: Single Diodes Brand: Rohm Semiconductor

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Product introduction

SCS205KNTRL is listed in the Single Diodes range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is 1200V, 5A, SMD, SILICON-CARBIDE. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for SCS205KNTRL

Description：1200V, 5A, SMD, SILICON-CARBIDE
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：1200 V
Current - Average Rectified (Io)：5A
Voltage - Forward (Vf) (Max) @ If：1.6 V @ 5 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：100 µA @ 1200 V
Capacitance @ Vr, F：260pF @ 1V, 1MHz
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：TO-263L
Operating Temperature - Junction：175°C
Grade：-
Qualification：-

Single Diodes datasheet and documents for SCS205KNTRL

SCS205KNTRL

Single Diodes Overview

The SCS205KNTRL is a silicon carbide Schottky barrier diode manufactured by ROHM Semiconductor. It features a TO-263-2L surface-mount package with a maximum repetitive reverse voltage of 1200 V and a continuous forward current rating of 5 A at a case temperature of 148°C. The device exhibits a typical forward voltage of 1.9 V at 5 A and a maximum reverse leakage current of 65 µA at 25°C, rising to 100 mA at 175°C. Total power dissipation is rated at 83 W, with a junction temperature range up to 175°C.

Single Diodes Feature Summary

Low forward voltage characteristics for improved efficiency
Negligible reverse recovery time and current
Temperature-independent switching behavior
Wide creepage distance of minimum 5.10 mm

Single Diodes Applications

Factory Automation
PV Power Conditioner
Wireless Charger
EV Charger Station

Single Diodes Procurement Notes

Verify the specific suffix 'TRL' corresponds to the required tape-and-reel packaging configuration before ordering. Confirm that the TO-263-2L footprint matches the target PCB design. Ensure thermal management solutions accommodate the specified power dissipation limits under actual operating conditions. Cross-reference the latest datasheet revision for any updates to absolute maximum ratings or electrical characteristics prior to final procurement.

Single Diodes Selection Notes

Select this component for high-voltage applications requiring robust thermal performance and minimal switching losses. The wide creepage distance simplifies insulation requirements in compact designs. Evaluate the derating curves for peak forward current based on expected case temperatures. Consider the total capacitive charge and reverse recovery characteristics for high-frequency switching environments.

Single Diodes Part Context

This part belongs to the SCS2xxKN series of 1200V SiC Schottky Barrier Diodes from ROHM. These devices are designed for surface-mount applications, offering a balance of high voltage handling and efficient power conversion. The series supports various industrial and automotive-grade applications where reliability and thermal stability are critical.