SCS212AMC7G

Description：DIODE SIL CARB 650V 12A TO220FM
Series：-
Mfr：Rohm Semiconductor
Package：Tube

SKU:23764e658870 Category: Single Diodes Brand: Rohm Semiconductor

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Product introduction

SCS212AMC7G is listed in the Single Diodes range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is DIODE SIL CARB 650V 12A TO220FM. Review the specifications below when checking this part for your BOM.

Single Diodes specifications for SCS212AMC7G

Description：DIODE SIL CARB 650V 12A TO220FM
Series：-
Mfr：Rohm Semiconductor
Package：Tube
Technology：-
Voltage - DC Reverse (Vr) (Max)：-
Current - Average Rectified (Io)：-
Voltage - Forward (Vf) (Max) @ If：-
Speed：-
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：-
Capacitance @ Vr, F：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Operating Temperature - Junction：-
Grade：-
Qualification：-

Single Diodes datasheet and documents for SCS212AMC7G

SCS212AMC7G

Single Diodes Overview

The SCS212AMC7G is a silicon carbide Schottky barrier diode manufactured by ROHM Semiconductor. It features a TO-220FM-2LGE package with a continuous forward current of 12.0 A and a reverse voltage rating of 650 V. The device supports a maximum junction temperature of 175 °C and offers a total power dissipation of 36 W. As a third-generation SiC component, it utilizes the TO-220FM-2LGE form factor for through-hole mounting.

Single Diodes Feature Summary

Utilizes silicon carbide material for high-temperature operation up to 175°C
Features negligible reverse recovery time and current for reduced switching losses
Provides low forward voltage characteristics for improved efficiency
Complies with automotive reliability standards including AEC-Q101

Single Diodes Applications

Automotive power electronics systems
High-efficiency DC-DC converters
On-board chargers for electric vehicles
Traction inverter circuits

Single Diodes Procurement Notes

Verify the specific suffix C7G corresponds to the tube packaging configuration as indicated in official documentation. Confirm that the TO-220FM-2LGE package dimensions match your thermal management requirements. Ensure the third-generation technology designation aligns with your design's performance targets. Cross-reference the AEC-Q101 qualification status if automotive compliance is mandatory for your application.

Single Diodes Selection Notes

Select this component when a through-hole SiC Schottky diode with 650V capability and 12A continuous current is required. The TO-220FM-2LGE package provides robust mechanical stability for high-power applications. Consider the 36W power dissipation rating for heatsink sizing. The third-generation architecture offers advantages in switching speed and thermal performance over previous iterations.

Single Diodes Part Context

This part belongs to ROHM's silicon carbide Schottky barrier diode family designed for high-efficiency power conversion. The SCS212AMC7G represents an evolution in SiC technology, offering improved thermal characteristics and lower forward voltage compared to earlier generations. It is specifically engineered to meet the rigorous demands of modern power electronic systems requiring high reliability and performance.