SCT1225C

SCT1225C

  • Description:SCR 1.2KV 25A TO220B
  • Series:-

SKU:6510e72f888e Category: Brand:

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Product Detailed Parameters

  • Description:SCR 1.2KV 25A TO220B
  • Series:-
  • Mfr:SMC Diode Solutions
  • Package:Tube
  • Voltage - Off State:1.2 kV
  • Voltage - Gate Trigger (Vgt) (Max):1.5 V
  • Current - Gate Trigger (Igt) (Max):40 mA
  • Current - Hold (Ih) (Max):120 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm):300A @ 50Hz
  • SCR Type:Standard Recovery
  • Operating Temperature:-40°C ~ 125°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220C
  • Voltage - On State (Vtm) (Max):1.6 V
  • Current - On State (It (AV)) (Max):-
  • Current - On State (It (RMS)) (Max):25 A
  • Current - Off State (Max):10 µA

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SCT1225C

Overview

The SCT1225C is a Silicon Controlled Rectifier (SCR) manufactured by SMC Diode Solutions. It features a maximum off-state voltage of 1.2 kV and an on-state RMS current rating of 25 A. The device utilizes a TO-220B package configuration. Key electrical specifications include a maximum gate trigger voltage of 1.5 V and a breakover current of 300 A. This component is designed for high-power switching applications requiring robust voltage handling capabilities.

Feature Summary

  • High voltage blocking capability with a 1.2 kV off-state rating
  • Capable of handling 25 A RMS on-state current
  • Low gate trigger voltage requirement for efficient control

Applications

  • Industrial motor control systems
  • High-voltage power supply circuits
  • AC/DC conversion modules

Procurement Notes

Verify the specific package variant, as sources indicate both TO-220B and TO-220C designations. Confirm RoHS compliance status and MSL rating prior to integration. Ensure thermal management solutions align with the 25 A RMS current rating. Cross-reference datasheet parameters against application requirements to validate performance margins.

Selection Notes

Select this SCR for applications demanding high voltage isolation and moderate current capacity. Compare gate trigger characteristics against available drive circuitry. Evaluate thermal resistance requirements for the chosen mounting method. Consider alternative packages if space constraints differ from standard through-hole dimensions.

Part Context

This component belongs to the Silicon Controlled Rectifier category within discrete semiconductors. It serves as a latching switch element in power electronics. The device provides unidirectional current control with high voltage tolerance. It is distinct from thyristor families offering lower voltage ratings or different packaging styles.

Replacement Considerations

ES1M: Parameter equivalent alternative from SMC Diode Solutions. AUS1M-HF: Parameter equivalent option from Comchip Technology. GSUS1M: Parameter equivalent substitute from Good-Ark Semiconductor.

SCT1225CSCT1225C

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