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Product Detailed Parameters
- Description:SCR 1.2KV 55A TO3P
- Series:-
- Mfr:SMC Diode Solutions
- Package:Tube
- Voltage - Off State:1.2 kV
- Voltage - Gate Trigger (Vgt) (Max):1.5 V
- Current - Gate Trigger (Igt) (Max):50 mA
- Current - Hold (Ih) (Max):120 mA
- Current - Non Rep. Surge 50, 60Hz (Itsm):520A @ 50Hz
- SCR Type:Standard Recovery
- Operating Temperature:-40°C ~ 125°C (TJ)
- Grade:-
- Qualification:-
- Mounting Type:Through Hole
- Package / Case:TO-3P-3, SC-65-3
- Supplier Device Package:TO-3P Insulated
- Voltage - On State (Vtm) (Max):1.6 V
- Current - On State (It (AV)) (Max):-
- Current - On State (It (RMS)) (Max):55 A
- Current - Off State (Max):10 µA
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Overview
The SCT1255Z is a silicon controlled rectifier (SCR) manufactured by SMC Diode Solutions, designed for high-power applications. It features a maximum repetitive peak off-state voltage of 1200 V and an on-state current rating of 55 A. The device utilizes a TO-3P insulated package, facilitating thermal management in industrial settings. Key electrical characteristics include a maximum on-state voltage of 1.6 V and a junction temperature range spanning from -40°C to 125°C. This component is classified as a standard recovery thyristor suitable for robust power control environments.
Feature Summary
- High surge current capability with strong resistance to electromagnetic interference
- Insulated TO-3P package design for effective heat dissipation
- High dv/dt rate performance ensuring stable switching operations
Applications
- Industrial motor control systems
- High-power AC/DC conversion circuits
- Resistive heating element regulation
Procurement Notes
Verify the specific suffix designation against the manufacturer's official documentation to confirm exact electrical tolerances and packaging variations. Ensure that the procurement channel provides valid RoHS compliance certificates and original manufacturer traceability records. Cross-reference the part number with authorized distributor lists to prevent counterfeit components. Confirm that the received units match the specified TO-3P insulated package dimensions and pinout configurations before integration into final assemblies.
Selection Notes
Select this component when designing circuits requiring high voltage blocking capabilities combined with substantial continuous current handling. The TO-3P insulated form factor is critical for applications necessitating galvanic isolation between the gate terminal and the heatsink. Evaluate the thermal resistance requirements of the system to ensure adequate heat sinking solutions are implemented. Consider the device's dv/dt rating when selecting snubber networks to prevent unintended turn-on events during rapid voltage transitions.
Part Context
This SCR belongs to the SCT series of high-power thyristors produced by SMC Diode Solutions. The series is engineered for demanding industrial applications where reliability under high stress conditions is paramount. The SCT1255Z specifically addresses scenarios requiring robust voltage ratings and significant current capacity within a standardized mechanical footprint compatible with common mounting hardware.
Replacement Considerations
Direct substitutes include ES1M, AUS1M-HF, GSUS1M, and HS1M. Verify parameter equivalence regarding voltage and current ratings before substitution.
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