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SD1A200G
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Product Detailed Parameters
- Description：THYRISTOR DO-15 T&R 4K
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Voltage - Off State：-
- Voltage - Gate Trigger (Vgt) (Max)：-
- Current - Gate Trigger (Igt) (Max)：-
- Current - Hold (Ih) (Max)：-
- Current - Non Rep. Surge 50, 60Hz (Itsm)：-
- SCR Type：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - On State (Vtm) (Max)：-
- Current - On State (It (AV)) (Max)：-
- Current - On State (It (RMS)) (Max)：-
- Current - Off State (Max)：-
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Overview
The SD1A200G is a silicon unidirectional thyristor (SIDAC) manufactured by Diodes Incorporated, housed in a compact DO-15 molded plastic package. It features a peak repetitive off-state voltage of 170 V and supports an on-state RMS current of 1 A at 80 °C. The device exhibits a breakover voltage range of 190 to 210 Vdc with a maximum holding current under 60 mA. Operating junction temperatures span from -40 °C to +125 °C, while storage ranges extend to +150 °C. Key electrical characteristics include a typical peak on-state voltage of 1.1 V at 1 A and a critical rate of rise of on-state current of 80 A/µs.
Feature Summary
- Compact DO-15 molded plastic package designed for space-saving applications
- Silicon unidirectional thyristor structure with lead-free terminal plating
- RoHS 2011/65/EU compliant component construction
Applications
- Gas igniters
Procurement Notes
Verify the specific manufacturer part number against official Diodes Incorporated documentation before procurement. Confirm that the DO-15 package dimensions and lead-free plating specifications match the design requirements. Ensure compliance with RoHS 2011/65/EU standards is documented for the specific batch. Cross-reference thermal resistance values and absolute maximum ratings with the latest datasheet revisions to prevent design errors during integration.
Selection Notes
Select this component when a compact unidirectional thyristor with a 190–210 V breakover voltage is required. Verify that the 1 A on-state RMS current rating meets the circuit load demands at the expected ambient temperature. Check that the 170 V repetitive off-state voltage provides sufficient margin for the application's peak voltages. Ensure the operating junction temperature range of -40 °C to +125 °C aligns with the environmental conditions of the target system.
Part Context
The SD1A200G belongs to the SIDAC family of silicon unidirectional thyristors produced by Diodes Incorporated. These devices are engineered for high-reliability switching applications requiring precise breakover characteristics. The DO-15 package provides a standardized footprint compatible with through-hole mounting processes. This series is distinct from bidirectional variants and standard SCRs due to its symmetric triggering behavior within the specified voltage range.
Replacement Considerations
Consult official Diodes Incorporated substitution guides for verified equivalents. Do not assume compatibility based solely on package type or nominal voltage ratings. Verify that any alternative component matches the 190–210 V breakover range and 1 A current handling capabilities.
