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The SFH601-3X009 is a single-channel transistor output optocoupler manufactured by Vishay Semiconductor Opto Division. It features an NPN phototransistor with a base connection, housed in a surface-mount 6-SMD package. The device provides 5000 Vrms insulation voltage and supports a maximum forward current of 60 mA with a forward voltage of 1.65 V. Key electrical parameters include a collector-emitter saturation voltage of 400 mV, a reverse voltage of 6 V, and power dissipation of 150 mW. The current transfer ratio ranges from 100% to 200%, with a maximum collector current of 50 mA and a collector-emitter voltage rating of 100 V. Operating temperatures span from -55°C to +100°C.
Verify the specific suffix X009 confirms the surface-mount 6-SMD configuration and base-connected phototransistor variant. Ensure the procurement documentation explicitly states the 100-200% CTR range and 5000 Vrms isolation rating. Confirm RoHS compliance status through the manufacturer's official declaration. Cross-reference the Vishay datasheet to validate the operating temperature range and package dimensions against your design requirements.
Select this component when a surface-mount solution with a base-connected phototransistor is required for improved switching speed compared to standard variants. The 5000 Vrms isolation rating suits applications demanding robust galvanic separation. Verify that the 50 mA maximum collector current meets the load requirements. Consider the 6-SMD package constraints for PCB layout density and thermal management capabilities within the specified temperature range.
This part belongs to the SFH601 series of transistor output optocouplers from Vishay. The series includes through-hole DIP-6 variants like the SFH601-3 and discontinued models such as the SFH601-4. The X009 suffix specifically denotes the surface-mount version, distinguishing it from the legacy DIP packages while maintaining similar electrical characteristics and isolation ratings.
Public confirmed substitute part numbers are not available in the provided source material.
The base connection allows for external control of the phototransistor's switching speed and sensitivity, enabling faster turn-off times and reduced storage time compared to base-floating configurations.
The maximum collector current is rated at 50 mA according to the official specifications.