SFT1202-E

Single Bipolar Transistors Overview

The SFT1202-E is an NPN silicon small-signal bipolar junction transistor (BJT) manufactured by onsemi. It features a maximum continuous collector current of 2 A and a collector-emitter breakdown voltage of 150 V. The device has a power dissipation rating of 1 W and a transition frequency of 140 MHz. Key electrical parameters include a minimum DC current gain (hFE) of 200, a collector-emitter saturation voltage of 110 mV, and an emitter-base voltage of 7 V. It operates at temperatures up to +150°C and is housed in a TO-251 package.

Single Bipolar Transistors Feature Summary

• High current handling capability with a 2 A continuous collector current rating for robust switching performance.
• Wide voltage tolerance supporting 150 V collector-emitter breakdown for versatile circuit integration.
• Fast switching characteristics enabled by a 140 MHz transition frequency suitable for high-speed applications.

Single Bipolar Transistors Applications

• General-purpose signal amplification
• Electronic switching circuits
• Power supply regulation stages

Single Bipolar Transistors Procurement Notes

Verify the component marking against official onsemi datasheets to confirm authenticity. Ensure the TO-251 package dimensions match design requirements. Check for specific ordering suffixes if tape-and-reel packaging is required instead of bulk. Confirm thermal resistance values for heat sink calculations during system integration.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN BJT with 2 A current capacity and 150 V voltage rating is needed. Consider the 1 W power dissipation limit and TO-251 thermal performance for PCB layout. Compare hFE ranges and transition frequencies against alternative transistors to ensure compatibility with specific gain and speed requirements in the target application.

Single Bipolar Transistors Part Context

The SFT1202-E belongs to onsemi's discrete small-signal bipolar transistor portfolio. It is part of the broader SFT series designed for general-purpose electronic applications. This component complements other onsemi power and sensing technologies used in industrial and consumer electronics systems requiring reliable switching and amplification functions.

Single Bipolar Transistors Replacement Considerations

The SFT1202-TL-E is a confirmed substitute variant within the same product family. Both share identical electrical specifications including 2 A current, 150 V voltage, and 140 MHz frequency ratings. Verify package compatibility and marking differences before implementation.

Single Bipolar Transistors FAQ

What is the maximum operating temperature for the SFT1202-E?

The maximum operating temperature is +150°C.

What is the typical collector-emitter saturation voltage?

The collector-emitter saturation voltage is specified as 110 mV.