SGF23N60UFTU

Overview

SGF23N60UFTU is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Fairchild Semiconductor, now part of onsemi. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 23 A. The device is housed in an isolated TO-3PF package with three terminals. Key electrical characteristics include a saturation voltage of 2.6 V at 15 V gate drive and 12 A collector current. Switching performance includes a turn-on time of 17 ns and a turn-off time of 60 ns. The component has a maximum power dissipation of 75 W and complies with RoHS standards.

Feature Summary

• High-speed switching capability designed for applications requiring rapid transition times.
• Low conduction loss achieved through optimized saturation voltage characteristics.
• Isolated case construction suitable for direct mounting to heat sinks without additional insulators.

Applications

• AC and DC motor control systems
• General purpose inverters
• Robotics and servo controls

Procurement Notes

Verify the specific manufacturer source, as Rochester Electronics also lists this part number alongside Fairchild and onsemi. Confirm RoHS compliance status, as some listings indicate lead-free composition while others may reference older non-compliant variants. Check for obsolescence status, as onsemi designates similar SGF23 series parts as discontinued. Ensure the TO-3PF package matches the thermal requirements of the target application.

Selection Notes

Select this component for circuits requiring high current handling up to 23 A with moderate switching speeds. The TO-3PF package provides robust mechanical stability for flange mounting. Compare the 2.6 V saturation voltage against alternative IGBTs to ensure efficiency targets are met. Verify that the 600 V breakdown voltage aligns with the system's peak voltage stresses. Consider the 75 W power dissipation limit when designing the thermal management solution.

Part Context

The SGF23N60UFTU belongs to the Fairchild UF series of Ultra-Fast IGBTs. This series was engineered to provide low conduction and switching losses compared to standard IGBTs. The part shares specifications with the SGF23N60UFDTU, differing primarily in packaging or suffix designation. It is functionally related to other 600V IGBTs in the Fairchild portfolio but offers specific current ratings distinct from lower-current variants like the SGP6N60UFTU.

Replacement Considerations

Direct substitutes include the SGF23N60UFDTU from onsemi, which shares identical electrical parameters and package type. Other compatible replacements within the same family must be verified for matching 23 A current and 600 V voltage ratings. Ensure any substitute maintains the TO-3PF form factor for board compatibility.