SGP23N60UFDTU

Description：IGBT 600V 23A TO-220-3
Series：-

SKU:92fa9ca7298d Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT 600V 23A TO-220-3
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：23 A
Current - Collector Pulsed (Icm)：92 A
Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 12A
Power - Max：100 W
Switching Energy：115µJ (on), 135µJ (off)
Input Type：Standard
Gate Charge：49 nC
Td (on/off) @ 25°C：17ns/60ns
Test Condition：300V, 12A, 23Ohm, 15V
Reverse Recovery Time (trr)：60 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220-3
Grade：-
Qualification：-

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SGP23N60UFDTU

Overview

The SGP23N60UFDTU is an Ultra-Fast IGBT from the UFD series, manufactured by Fairchild Semiconductor and distributed by onsemi. It features a collector-emitter voltage of 600 V and a continuous collector current of 23 A at 25°C case temperature. The device integrates a fast recovery diode with a typical reverse recovery time of 42 ns. Key electrical parameters include a saturation voltage of 2.1 V at 12 A and a total gate charge of 49 nC. It is housed in a TO-220 package.

Feature Summary

High speed switching capability for efficient operation
Low saturation voltage to minimize conduction losses
Integrated CO-PAK IGBT with Fast Recovery Diode (FRD)
High input impedance for simplified drive requirements

Applications

AC & DC motor controls
General purpose inverters
Robotics systems
Servo controls

Procurement Notes

Verify component authenticity through authorized distributors or official manufacturer channels. Confirm datasheet revision status as specifications may change without notice. Check for RoHS compliance markers if required by local regulations. Ensure proper handling procedures are followed due to static sensitivity. Review application notes for specific mounting and thermal management guidelines.

Selection Notes

Select this component for applications requiring high-speed switching and low conduction losses. Consider the 600V rating and 23A current capacity for appropriate load matching. Evaluate thermal resistance values for heatsink design. Compare switching loss characteristics against alternative devices for efficiency optimization. Verify package compatibility with existing PCB layouts.

Part Context

This part belongs to the Fairchild UFD series of Insulated Gate Bipolar Transistors. The series is specifically engineered for applications demanding high-speed switching performance. It combines IGBT technology with integrated fast recovery diodes to reduce system complexity and improve overall efficiency in power conversion circuits.

Replacement Considerations

Direct substitutes within the same family include SGW23N60UFDTU. Cross-referencing with other manufacturers requires matching voltage, current, and package specifications. Verify switching times and thermal characteristics before implementation.