SGW23N60UFDTM

SGW23N60UFDTM

$0.77
  • Description:IGBT 600V 23A TO-263
  • Series:-

SKU:7d8f29f51b37 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT 600V 23A TO-263
  • Series:-
  • Mfr:Fairchild Semiconductor
  • Package:Bulk
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):23 A
  • Current - Collector Pulsed (Icm):92 A
  • Vce(on) (Max) @ Vge, Ic:2.6V @ 15V, 12A
  • Power - Max:100 W
  • Switching Energy:115µJ (on), 135µJ (off)
  • Input Type:Standard
  • Gate Charge:49 nC
  • Td (on/off) @ 25°C:17ns/60ns
  • Test Condition:300V, 12A, 23Ohm, 15V
  • Reverse Recovery Time (trr):60 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263 (D2PAK)
  • Grade:-
  • Qualification:-

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SGW23N60UFDTM

Overview

The SGW23N60UFDTM is an N-channel Insulated Gate Bipolar Transistor (IGBT) from Fairchild Semiconductor's UF series, housed in a TO-252 (DPAK) surface-mount package. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 23 A at case temperature. The device is engineered for high-speed switching applications with low conduction losses, offering a saturation voltage of 2.1 V at 12 A. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a fall time of 60 ns, and a power dissipation capacity of 75 W.

Feature Summary

  • Ultra-fast switching capability designed for high-frequency operation
  • Low saturation voltage to minimize conduction losses
  • High input impedance for efficient drive requirements

Applications

  • AC and DC motor controls
  • General purpose inverters
  • Robotics systems
  • Servo controls

Procurement Notes

Verify the specific suffix DTU or DTM against the manufacturer datasheet to confirm pinout compatibility and thermal characteristics. Confirm RoHS compliance status as historical Fairchild data may vary by production batch. Ensure the ordering part number matches the exact package style required for the PCB footprint. Check for obsolescence notices from ON Semiconductor, the successor to Fairchild Semiconductor.

Selection Notes

Select this component for designs requiring a balance between high current handling and fast switching speeds in a compact surface-mount form factor. Compare the 2.1 V saturation voltage at 12 A against alternative IGBTs to ensure efficiency targets are met. Verify that the TO-252 package thermal resistance supports the expected power dissipation under worst-case operating conditions.

Part Context

This device belongs to the Fairchild UF series of Insulated Gate Bipolar Transistors. The series is characterized by optimized performance for applications demanding both low conduction loss and high-speed switching. Similar parts in the lineup include the SGP and SGH series, which offer varying current ratings and package options while maintaining the same core ultra-fast technology.

Replacement Considerations

Direct substitutes within the same family include the SGW23N60UF and SGW23N60UFD. When replacing, verify that the alternative package type matches the existing board layout. Ensure the replacement maintains the 600 V rating and comparable switching times to preserve circuit timing.

SGW23N60UFDTMSGW23N60UFDTM
$0.77
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