SHN1B01FDW1T1G

SHN1B01FDW1T1G

  • Description:TRANS NPN/PNP 50V 200MA SC74
  • Series:-

SKU:816e6e475888 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN/PNP 50V 200MA SC74
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max):2µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
  • Power - Max:380mW
  • Frequency - Transition:-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-74, SOT-457
  • Supplier Device Package:SC-74
  • Grade:-
  • Qualification:-

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SHN1B01FDW1T1G

Overview

The SHN1B01FDW1T1G is a dual bipolar junction transistor (BJT) array manufactured by onsemi, formerly Fairchild Semiconductor. It integrates one NPN and one PNP transistor within a single SC-74 (SOT-457) surface-mount package. The device supports a maximum collector current of 200 mA and withstands a collector-emitter breakdown voltage of 50 V. Key electrical characteristics include a DC current gain (hFE) of at least 200 when measured at 2 mA and 6 V. Power dissipation is rated at 380 mW, with saturation voltages specified at 250 mV for the NPN and 300 mV for the PNP under identical test conditions of 10 mA base and 100 mA collector currents.

Feature Summary

  • Integrates complementary NPN and PNP transistors in a compact dual configuration
  • Provides high current gain suitable for general-purpose switching applications
  • Designed for surface-mount assembly to facilitate automated PCB placement

Applications

  • General-purpose signal switching circuits
  • Driver stages for low-power loads
  • Logic interface buffers between different voltage domains

Procurement Notes

Verify the manufacturer origin carefully, as the part was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific suffix DW1T1G corresponds to the required SC-74 packaging and tape-and-reel quantity specifications. Ensure compatibility with RoHS directives if environmental compliance is a project requirement. Cross-reference datasheets from both legacy Fairchild and current onsemi repositories to confirm parameter consistency.

Selection Notes

Select this component when a matched NPN/PNP pair is required in a minimal footprint. The SC-74 package offers a smaller profile compared to larger dual-transistor packages. Consider the 50 V rating and 200 mA current limit against circuit demands. The integrated nature ensures matched thermal characteristics between the two devices, which may be beneficial for differential or push-pull configurations.

Part Context

This component belongs to the HN1B01 series of dual BJT arrays. It serves as a direct successor to earlier Fairchild Semiconductor designs, maintaining pinout and electrical compatibility while transitioning to onsemi branding. The SC-74 package is standard for space-constrained consumer and industrial electronics requiring dual transistor functionality.

Replacement Considerations

The SMBT3946DW1T1G is a similar dual NPN/PNP transistor in a SOT-363 package but operates at a lower 40 V rating. Verify voltage headroom requirements before substitution. Other generic dual BJT arrays in SC-74 packages may require pin-to-pin verification and re-evaluation of hFE and saturation voltage parameters.

SHN1B01FDW1T1GSHN1B01FDW1T1G

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