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Product Detailed Parameters
- Description:IC PWR SWITCH P-CHAN 1:1 SC89-6
- Series:-
- Mfr:Vishay Siliconix
- Package:Tape & Reel (TR),Cut Tape (CT)
- Switch Type:General Purpose
- Number of Outputs:1
- Ratio - Input:Output:1:01
- Output Configuration:High Side
- Output Type:P-Channel
- Interface:On/Off
- Voltage - Load:1.8V ~ 8V
- Voltage - Supply (Vcc/Vdd):-
- Current - Output (Max):430mA
- Rds On (Typ):500mOhm
- Input Type:-
- Features:Slew Rate Controlled
- Fault Protection:-
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SC-89 (SOT-563F)
- Package / Case:SOT-563, SOT-666
- Grade:-
- Qualification:-
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Overview
The SI1040X-T1-GE3 is a P-channel MOSFET from the Vishay Siliconix TrenchFET series, housed in an SC-89 (SOT-563F) surface-mount package. It features a drain-source voltage (Vds) of -8 V and a continuous drain current (Id) of 890 mA at ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 890 mΩ at a gate-source voltage (Vgs) of -2.5 V. Power dissipation is rated at 236 mW, with an operating junction temperature range spanning from -55°C to +150°C.
Feature Summary
- Utilizes TrenchFET technology for optimized power switching performance.
- Integrated level-shift capability suitable for load switch applications.
- Compact SC-89 surface-mount package design.
Applications
- Portable battery-powered equipment
- Load switching circuits
- Power management modules
Procurement Notes
Verify the specific ordering suffix and tape-and-reel specifications against the official manufacturer datasheet prior to procurement. Confirm that the component meets all required environmental compliance standards for the intended deployment environment. Ensure that static-sensitive handling procedures are strictly followed during storage and assembly to prevent electrostatic discharge damage to the semiconductor structure.
Selection Notes
Select this component when a low-voltage P-channel switch is required for space-constrained designs. The SC-89 package offers a small footprint compared to larger SO-8 alternatives. Evaluate the thermal constraints carefully, as the 236 mW power dissipation rating limits high-current continuous operation. Verify that the -8 V drain-source voltage rating exceeds the maximum circuit potential to ensure reliable blocking performance under all operating conditions.
Part Context
This part belongs to the SI1040X family of low-voltage P-channel MOSFETs designed for portable electronics. The TrenchFET process enables improved figure-of-merit characteristics relative to standard planar technologies. The SC-89 package provides a compact solution for modern printed circuit board layouts requiring minimal surface area occupation while maintaining adequate electrical isolation.
Replacement Considerations
Consult official substitution guides for verified equivalents. Cross-reference pinouts and electrical parameters before integrating alternative components into existing designs.
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