SI1040X-T1-GE3

SI1040X-T1-GE3

$0.56
  • Description:IC PWR SWITCH P-CHAN 1:1 SC89-6
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:7de10dbbb304 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC PWR SWITCH P-CHAN 1:1 SC89-6
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Switch Type:General Purpose
  • Number of Outputs:1
  • Ratio - Input:Output:1:01
  • Output Configuration:High Side
  • Output Type:P-Channel
  • Interface:On/Off
  • Voltage - Load:1.8V ~ 8V
  • Voltage - Supply (Vcc/Vdd):-
  • Current - Output (Max):430mA
  • Rds On (Typ):500mOhm
  • Input Type:-
  • Features:Slew Rate Controlled
  • Fault Protection:-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:SC-89 (SOT-563F)
  • Package / Case:SOT-563, SOT-666
  • Grade:-
  • Qualification:-

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SI1040X-T1-GE3

Overview

The SI1040X-T1-GE3 is a P-channel MOSFET from the Vishay Siliconix TrenchFET series, housed in an SC-89 (SOT-563F) surface-mount package. It features a drain-source voltage (Vds) of -8 V and a continuous drain current (Id) of 890 mA at ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 890 mΩ at a gate-source voltage (Vgs) of -2.5 V. Power dissipation is rated at 236 mW, with an operating junction temperature range spanning from -55°C to +150°C.

Feature Summary

  • Utilizes TrenchFET technology for optimized power switching performance.
  • Integrated level-shift capability suitable for load switch applications.
  • Compact SC-89 surface-mount package design.

Applications

  • Portable battery-powered equipment
  • Load switching circuits
  • Power management modules

Procurement Notes

Verify the specific ordering suffix and tape-and-reel specifications against the official manufacturer datasheet prior to procurement. Confirm that the component meets all required environmental compliance standards for the intended deployment environment. Ensure that static-sensitive handling procedures are strictly followed during storage and assembly to prevent electrostatic discharge damage to the semiconductor structure.

Selection Notes

Select this component when a low-voltage P-channel switch is required for space-constrained designs. The SC-89 package offers a small footprint compared to larger SO-8 alternatives. Evaluate the thermal constraints carefully, as the 236 mW power dissipation rating limits high-current continuous operation. Verify that the -8 V drain-source voltage rating exceeds the maximum circuit potential to ensure reliable blocking performance under all operating conditions.

Part Context

This part belongs to the SI1040X family of low-voltage P-channel MOSFETs designed for portable electronics. The TrenchFET process enables improved figure-of-merit characteristics relative to standard planar technologies. The SC-89 package provides a compact solution for modern printed circuit board layouts requiring minimal surface area occupation while maintaining adequate electrical isolation.

Replacement Considerations

Consult official substitution guides for verified equivalents. Cross-reference pinouts and electrical parameters before integrating alternative components into existing designs.

SI1040X-T1-GE3SI1040X-T1-GE3
$0.56
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