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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.66A SC70-6
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：660mA
- Rds On (Max) @ Id, Vgs：385mOhm @ 660mA, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：270mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-70-6
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI1902DL-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology, rated for a drain-source voltage of 20 V. It features a maximum on-state resistance of 0.385 Ω at VGS = 4.5 V and 0.630 Ω at VGS = 2.5 V. The device supports a continuous drain current of 0.70 A and has a typical total gate charge of 0.8 nC. Packaged in a lead-free SC-70 (SOT-363) housing with six leads, it operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- TrenchFET power MOSFET architecture optimized for low gate drive requirements
- Dual configuration integrating two independent N-channel transistors in a single package
- Lead-free construction compliant with halogen-free material categorization standards
Applications
- Low-voltage battery-powered portable electronics
- DC-DC converter synchronous rectification stages
- Load switching circuits in mobile devices
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance status. The -T1 suffix indicates tape and reel packaging, while -GE3 denotes halogen-free composition. Confirm availability through authorized distributors as standard commercial stock may be limited.
Selection Notes
Select this component when space-constrained designs require dual N-channel switching in an SC-70 footprint. Ensure the application logic aligns with the 2.5 V gate threshold capability. Validate thermal dissipation limits under steady-state conditions given the small package size.
Part Context
This part belongs to the Vishay Siliconix SI19xxDx series of dual MOSFETs. It shares the SOT-363 form factor with complementary P-channel variants like the SI1907DL. The product line emphasizes miniaturization for consumer electronics requiring efficient power management in minimal board areas.
Replacement Considerations
Direct replacements include other dual N-channel MOSFETs in the SC-70 package with comparable 20 V ratings and similar RDS(on) specifications. Verify pinout compatibility and thermal characteristics before substitution.
