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SI3434DV-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 4.6A 6TSOP. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI3434DV-T1-GE3
- Description：MOSFET N-CH 30V 4.6A 6TSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：4.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：34mOhm @ 6.1A, 4.5V
- Vgs(th) (Max) @ Id：600mV @ 1mA (Min)
- Gate Charge (Qg) (Max) @ Vgs：12 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：1.14W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-TSOP
- Package / Case：SOT-23-6 Thin, TSOT-23-6
Single FETs, MOSFETs datasheet and documents for SI3434DV-T1-GE3
Single FETs, MOSFETs Overview
The SI3434DV-T1-GE3 is a single N-channel enhancement mode field effect transistor manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a TSOP-6 surface-mount package. The device features a drain-source breakdown voltage of 30 V and a continuous drain current rating of 8 A. Key electrical characteristics include a maximum on-resistance of 25 milliohms at a gate-source voltage of 10 V, with a gate charge of 9 nanocoulombs. It operates within a temperature range from -55 °C to +150 °C junction temperature.
Single FETs, MOSFETs Feature Summary
- Single N-channel configuration utilizing TrenchFET power MOSFET technology for low on-resistance performance.
- Surface-mount TSOP-6 package design optimized for automated assembly and compact board layouts.
- Enhancement mode operation with high switching speed capabilities defined by low gate charge specifications.
Single FETs, MOSFETs Applications
- DC-DC converter circuits requiring efficient power switching
- Load switch applications for battery-powered devices
- Power management modules in portable electronics
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including the suffix to ensure correct packaging and compliance status. Confirm that the TSOP-6 footprint matches your PCB layout requirements. Check for RoHS compliance documentation if required by your manufacturing standards. Ensure storage conditions adhere to moisture sensitivity levels specified in the datasheet prior to soldering.
Single FETs, MOSFETs Selection Notes
Select this component when a 30 V rated N-channel MOSFET with an 8 A current capacity is required in a small outline package. Compare the 25 milliohm on-resistance against thermal dissipation needs in your specific application. Consider the gate charge value for driving circuit compatibility and switching frequency requirements relative to alternative packages.
Single FETs, MOSFETs Part Context
This component belongs to the Vishay Siliconix SI34 series of discrete power MOSFETs. The series focuses on providing robust performance in small surface-mount packages suitable for consumer and industrial electronics. The TSOP-6 variant offers a balance between current handling capability and physical size constraints for modern printed circuit board designs.
Single FETs, MOSFETs Replacement Considerations
Consult official Vishay cross-reference documents for verified substitutes. Ensure any replacement maintains identical pinout configuration and voltage ratings. Verify that thermal resistance and package dimensions are compatible with existing board space.
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