SI3459BDV-T1-E3

$1.03

Description：MOSFET P-CH 60V 2.9A 6TSOP
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:234f21238c53 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI3459BDV-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 60V 2.9A 6TSOP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI3459BDV-T1-E3

Description：MOSFET P-CH 60V 2.9A 6TSOP
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：216mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：3.3W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：6-TSOP
Package / Case：SOT-23-6 Thin, TSOT-23-6

Single FETs, MOSFETs datasheet and documents for SI3459BDV-T1-E3

SI3459BDV-T1-E3

Single FETs, MOSFETs Overview

The SI3459BDV-T1-E3 is a P-channel MOSFET from Vishay Siliconix utilizing TrenchFET technology. It features a -60 V drain-source voltage and a continuous drain current of -2.9 A at TC = 25 °C. The device offers a maximum on-resistance of 0.288 Ω at VGS = -4.5 V and 0.216 Ω at VGS = -10 V. Total gate charge reaches 12 nC at VGS = -10 V. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a TSOP-6 package.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET architecture
Single channel configuration
Enhancement mode operation

Single FETs, MOSFETs Applications

Load switch

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation, as it determines lead-free or halogen-free compliance status. Confirm the component's active production status and availability through authorized distribution channels prior to finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Evaluate the thermal resistance characteristics for the intended application environment. Ensure that the gate drive voltage aligns with the specified thresholds to achieve the desired on-state resistance levels. Validate the package dimensions against the recommended land pattern specifications.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix SI3459 series of single P-channel MOSFETs. It is manufactured using silicon technology and is designed for surface-mount applications. The device is available in a TSOP-6 package configuration.

Single FETs, MOSFETs Replacement Considerations

Cross-reference alternative part numbers with identical electrical parameters and physical footprint dimensions. Verify compatibility with existing PCB layouts and thermal management requirements before implementing any substitution.