SI3865BDV-T1-E3

Overview

The SI3865BDV-T1-E3 is a P-Channel Power MOSFET from the Vishay Siliconix SI3 series, utilizing TrenchFET technology. It features a 20 V drain-source breakdown voltage and a continuous drain current of 4.7 A. The device exhibits a maximum on-resistance of 100 mOhms at a gate-source voltage of 4.5 V. It operates within a temperature range of -55 °C to +150 °C and dissipates up to 2 W of power. Packaged in a TSOP-6 surface-mount configuration, it includes a gate charge of 9 nC and a threshold voltage of 1.4 V.

Feature Summary

• Utilizes TrenchFET technology for enhanced performance
• Single-channel P-Channel enhancement mode operation
• Surface-mount TSOP-6 package design

Applications

• Power distribution circuits
• Load switching applications
• Battery management systems

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance details via official documentation. Validate datasheet revisions against specific manufacturing batches. Ensure storage conditions meet semiconductor handling standards. Cross-reference ordering suffixes with manufacturer specifications.

Selection Notes

Evaluate thermal dissipation requirements against the 2 W power rating. Verify gate drive compatibility with the 1.4 V threshold voltage. Assess package suitability for the target PCB layout constraints. Consider operating temperature limits relative to ambient conditions. Review electrical characteristics for circuit efficiency optimization.

Part Context

This component belongs to the Vishay SI3 series of small signal MOSFETs. It shares the TSOP-6 package form factor with related devices like the SI3805DV and SI3867DV. The product line emphasizes low on-resistance and high switching speed for portable electronics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.