SI3865BDV-T1-GE3

Description：IC PWR SWITCH P-CHAN 1:1 6TSOP
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:702e20f61895 Category: Power Distribution Switches, Load Drivers Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：IC PWR SWITCH P-CHAN 1:1 6TSOP
Series：-
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Switch Type：General Purpose
Number of Outputs：1
Ratio - Input:Output：1:01
Output Configuration：High Side
Output Type：P-Channel
Interface：On/Off
Voltage - Load：1.8V ~ 8V
Voltage - Supply (Vcc/Vdd)：-
Current - Output (Max)：2.9A
Rds On (Typ)：45mOhm
Input Type：-
Features：Slew Rate Controlled
Fault Protection：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Supplier Device Package：6-TSOP
Package / Case：SOT-23-6 Thin, TSOT-23-6
Grade：-
Qualification：-

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SI3865BDV-T1-GE3

Overview

The SI3865BDV-T1-GE3 is a P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features a 60 V drain-source voltage and a continuous drain current of 2.9 A at case temperature. The device offers a maximum on-resistance of 216 mΩ at 10 V gate drive. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 3.3 W at case temperature. The component is housed in a compact 6-TSOP surface-mount package.

Feature Summary

Utilizes TrenchFET technology for optimized performance
Designed for surface-mount applications with low profile
Supports high-temperature operation up to 150°C

Applications

Power management circuits
Battery protection systems
Load switch applications

Procurement Notes

Verify the specific ordering suffix to ensure compliance with RoHS standards and lead-free manufacturing requirements. Confirm that the requested part number matches the exact electrical specifications required for the design, particularly regarding the on-resistance and voltage ratings. Cross-reference the manufacturer datasheet to validate the package type and pin configuration before finalizing procurement orders.

Selection Notes

Select this component when a P-channel MOSFET with 60 V rating and TSOP-6 packaging is required. Consider the 216 mΩ on-resistance for efficiency calculations and verify thermal dissipation capabilities against the application's power requirements. Ensure the gate drive voltage aligns with the specified threshold and on-resistance conditions for optimal switching performance.

Part Context

This component belongs to the SI34xx series of P-channel MOSFETs from Vishay Siliconix. It is part of the broader TrenchFET family, which emphasizes low on-resistance and fast switching characteristics. The SI3865BDV-T1-GE3 variant specifically targets applications requiring reliable performance in compact surface-mount designs with moderate current handling capabilities.