SI3865CDV-T1-GE3

SI3865CDV-T1-GE3

$0.18
  • Description:IC PWR SWITCH P-CHAN 1:1 6TSOP
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)

SKU:9bce544a1e2e Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:IC PWR SWITCH P-CHAN 1:1 6TSOP
  • Series:-
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)
  • Switch Type:General Purpose
  • Number of Outputs:1
  • Ratio - Input:Output:1:01
  • Output Configuration:High Side
  • Output Type:P-Channel
  • Interface:On/Off
  • Voltage - Load:1.8V ~ 12V
  • Voltage - Supply (Vcc/Vdd):-
  • Current - Output (Max):2.8A
  • Rds On (Typ):50mOhm
  • Input Type:-
  • Features:Slew Rate Controlled
  • Fault Protection:-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:6-TSOP
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Grade:-
  • Qualification:-

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SI3865CDV-T1-GE3

Overview

The SI3865CDV-T1-GE3 is a dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a -20V drain-source voltage and a continuous drain current of 2.8A. The device offers a low on-resistance of 83 milliohms at a gate-source voltage of -4.5V. Packaged in a compact TSOP-6 surface-mount case, it supports operation across a temperature range of -55°C to +150°C. This component is designed for efficient power switching applications requiring low profile and high performance.

Feature Summary

  • Dual P-channel configuration for synchronized control
  • TrenchFET technology for optimized on-resistance
  • Compact TSOP-6 surface-mount package

Applications

  • Power distribution circuits
  • Load switches
  • Battery protection systems

Procurement Notes

Verify the obsolete status with the manufacturer before procurement planning. Confirm availability of alternative components or last-time buy options. Ensure compatibility with existing design specifications when sourcing substitutes. Check for updated datasheets reflecting any final manufacturing changes.

Selection Notes

Select this component for applications requiring dual P-channel switching in a small footprint. Consider the 83 milliohm on-resistance for efficiency requirements. Evaluate the TSOP-6 package constraints against board space limitations. Verify thermal management capabilities within the specified operating temperature range.

Part Context

This part belongs to the SI3 series of MOSFETs from Vishay Siliconix. It complements other devices in the lineup by offering dual-channel functionality in a minimal package. The series is known for integrating TrenchFET technology to enhance power density and switching efficiency in portable and industrial electronics.

Replacement Considerations

Consult official documentation for confirmed substitute part numbers due to the product's obsolete status. Verify pinout and electrical parameter compatibility before integration.

SI3865CDV-T1-GE3SI3865CDV-T1-GE3
$0.18
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