SI4456DY-T1-E3

$2.13

Description：MOSFET N-CH 40V 33A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f45c82371a3b Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SI4456DY-T1-E3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 40V 33A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SI4456DY-T1-E3

Description：MOSFET N-CH 40V 33A 8SO
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：122 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5670 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：3.5W (Ta), 7.8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SOIC
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for SI4456DY-T1-E3

SI4456DY-T1-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI4456DY-T1-E3 is a lead-free N-Channel MOSFET utilizing TrenchFET Gen II technology. It features a 40 V drain-source voltage and a maximum continuous drain current of 33 A at 25 °C case temperature. The device exhibits a low on-state resistance of 0.0038 Ω at VGS = 10 V and 0.0045 Ω at VGS = 4.5 V. Total gate charge is typically 37.5 nC at VGS = 4.5 V. It operates within a junction temperature range of -55 to 150 °C and is housed in an SO-8 surface-mount package.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchFET Gen II power MOSFET technology for optimized performance
Includes 100% Rg and UIS testing for enhanced reliability
Constructed as a halogen-free component according to IEC 61249-2-21

Single FETs, MOSFETs Applications

Secondary Rectification
Point of Load

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation, as variations exist between lead-free and halogen-free versions. Confirm that the requested part matches the exact datasheet revision and manufacturing location requirements. Ensure compatibility with RoHS directives if applicable to your supply chain standards before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-state resistance and high current handling capabilities within a compact SO-8 footprint. Evaluate thermal management strategies based on the specified junction-to-ambient and junction-to-foot thermal resistance ratings. Verify that the gate drive voltage aligns with the specified thresholds for optimal conduction characteristics.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix Si4456DY series of N-Channel MOSFETs. It is manufactured using silicon technology and is designed for surface mounting. The product line emphasizes efficiency through advanced trench gate architecture, targeting power management solutions where space constraints and thermal performance are critical design factors.