SI4804BDY-T1-E3

$0.77

Description：MOSFET 2N-CH 30V 5.7A 8SOIC
Series：TrenchFET®

SKU:92161938b074 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 5.7A 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：5.7A
Rds On (Max) @ Id, Vgs：22mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4804BDY-T1-E3

Overview

The Vishay Siliconix SI4804BDY-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 surface-mount package. It features a drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 7.5 A at 25 °C. The device exhibits a maximum on-state resistance (RDS(on)) of 0.022 Ω at VGS = 10 V and 0.030 Ω at VGS = 4.5 V. Total gate charge (Qg) is typically 71 nC at VGS = 4.5 V. Thermal characteristics include a junction-to-ambient thermal resistance (RthJA) of 93 °C/W under steady-state conditions.

Feature Summary

Dual N-channel configuration with symmetrical electrical characteristics for both channels.
TrenchFET power MOSFET architecture optimized for pulse-width modulation (PWM) applications.
Halogen-free construction compliant with IEC 61249-2-21 standards.

Applications

Symmetrical Buck-Boost DC/DC Converters

Procurement Notes

Verify the specific ordering suffix to confirm compliance requirements. The -E3 suffix indicates lead-free status, while the -GE3 suffix denotes both lead-free and halogen-free attributes. Confirm that the selected variant aligns with project material specifications before procurement.

Selection Notes

Select this component for low-voltage synchronous rectification or high-current switching applications requiring dual isolated channels. Ensure the operating junction temperature remains within the -55 °C to +150 °C range and validate thermal dissipation against the specified RthJA limits.

Part Context

This part belongs to the Vishay Siliconix Si4804BDY series of dual N-channel MOSFETs. It shares the same die and pinout as the Si4804BDY-T1-GE3 variant, differing only in halogen content. Both are manufactured using silicon TrenchFET technology.