SI7270DP-T1-GE3

Description：MOSFET 2N-CH 30V 8A PPAK SO8
Series：TrenchFET®

SKU:e62ff34259a9 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 8A PPAK SO8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：8A
Rds On (Max) @ Id, Vgs：21mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：900pF @ 15V
Power - Max：17.8W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® SO-8 Dual
Supplier Device Package：PowerPAK® SO-8 Dual
Grade：-
Qualification：-

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SI7270DP-T1-GE3

Overview

The Si7270DP-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a PowerPAK SO-8 package. The device features a maximum drain-source voltage of 30 V and a continuous drain current of 8 A at a case temperature of 25 °C. The on-state resistance is specified as 21 mΩ at VGS = 10 V and 25 mΩ at VGS = 4.5 V. Total gate charge is typically 14 nC at VGS = 10 V and 6.6 nC at VGS = 4.5 V. Operating junction and storage temperatures range from -55 to 150 °C, with a maximum power dissipation of 17.8 W at TC = 25 °C.

Feature Summary

Dual N-channel configuration within a single leadless PowerPAK SO-8 package
Optimized for PWM applications with 100% UIS testing
Halogen-free construction compliant with IEC 61249-2-21 definition

Applications

Fixed Telecom Server
Synchronous Converter

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance status. Ensure that the component matches the required RoHS directive standards before integration into final assemblies. Confirm that the package type aligns with the intended PCB land pattern requirements for optimal thermal performance.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching applications. Evaluate the thermal resistance characteristics relative to the available copper area on the PCB. Consider the gate charge specifications to ensure compatibility with the driving circuit capabilities for efficient PWM operation.

Part Context

This part belongs to the Vishay Siliconix MOSFET portfolio utilizing TrenchFET technology. It is designed to provide high performance in a small surface-mount footprint. The PowerPAK SO-8 package allows for direct substitution in standard SO-8 layouts while offering improved thermal dissipation compared to traditional leaded packages.