SIA914ADJ-T1-GE3

Overview

The SiA914ADJ-T1-GE3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a thermally enhanced PowerPAK SC-70 package with dimensions of 2.05 mm by 2.05 mm. The device supports a drain-source voltage (VDS) of 20 V and a continuous drain current (ID) of 4.5 A at 25 °C case temperature. On-resistance (RDS(on)) ranges from 0.035 Ω to 0.063 Ω depending on gate drive conditions. Total gate charge (Qg) is typically 8.2 nC at VGS = 8 V. Operating junction temperature spans -55 °C to +150 °C.

Feature Summary

• TrenchFET power MOSFET architecture for low on-resistance
• Thermally enhanced PowerPAK SC-70 leadless package
• Small footprint area suitable for portable devices

Applications

• Load switch applications in mobile computing
• DC/DC converter circuits
• Power management systems in smartphones and tablets

Procurement Notes

Verify the component against official Vishay datasheet document number 62872. Confirm the marking code 'C J X' matches the specific lot traceability requirements. Ensure the ordering suffix '-T1-GE3' corresponds to the reel packaging format and halogen-free compliance status required for your assembly process.

Selection Notes

Select this component when a compact dual N-channel configuration is required for low-voltage switching. Evaluate thermal resistance ratings, specifically the maximum junction-to-ambient resistance of 65 °C/W, against your board layout constraints. Verify that the 20 V breakdown voltage provides sufficient margin for your specific circuit operating conditions.

Part Context

This part belongs to the SiA914 series of dual N-channel MOSFETs manufactured by Vishay Siliconix. It is designed as an alternative to single-channel solutions where space efficiency is critical. The PowerPAK SC-70 package distinguishes it from larger surface-mount options while maintaining comparable electrical performance for portable electronics.

Replacement Considerations

Check for direct replacements within the SiA914 family or other Vishay dual MOSFETs with matching 20 V ratings and similar RDS(on) specifications. Ensure any substitute maintains the PowerPAK SC-70-6L footprint to avoid PCB redesign.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage (VGS) is rated at ±8 V.

How does the on-resistance vary with gate voltage?

RDS(on) decreases as gate voltage increases, ranging from a maximum of 0.063 Ω at VGS = 1.8 V to 0.043 Ω at VGS = 4.5 V.

Is the device suitable for high-temperature environments?

Yes, the operating junction temperature range extends up to +150 °C.