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SIC788ACD-T1-GE3 is listed in the Full Half-Bridge (H Bridge) Drivers range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is IC HALF BRIDGE DRIVER 50A PPAK. Review the specifications below when checking this part for your BOM.
The SIC788ACD-T1-GE3 is a MOSFET gate driver from the Vishay Siliconix SIC series, designed for high-side and low-side applications. It features a single driver with one output capable of delivering 50 A peak current. The device operates within a supply voltage range of 4.5 V to 18 V and accepts input signals between 4.5 V and 18 V. It exhibits non-inverting configuration with maximum turn-on and turn-off delays of 15 ns and 18 ns, respectively. Quiescent current is 295 uA, and it supports a shutdown function. Operating temperatures span from -40°C to +125°C, housed in a PowerPak-40 (MLP66-40L) SMD package.
Verify the exact ordering suffix and manufacturer part number against official Vishay documentation before procurement. Confirm RoHS and REACH SVHC compliance status through the manufacturer's latest datasheet or certification documents. Ensure the component matches the specified MLP66-40L package dimensions for PCB layout compatibility. Cross-reference the specific revision level to avoid discrepancies in electrical characteristics or pinout definitions.
Select this component when a single-channel gate driver with high peak current drive is required for VR or DrMOS topologies. Consider the 4.5 V to 18 V supply range and the specific delay characteristics for timing-sensitive designs. Evaluate the PowerPak-40 package suitability for thermal management and board space constraints. Verify that the non-inverting logic aligns with the control interface requirements of the system.
This part belongs to the SIC series of specialized PMICs from Vishay Siliconix, focusing on power management solutions. It is categorized under MOSFET Gate Drivers and serves as a critical interface component in advanced power conversion stages. The device integrates driver capabilities to support efficient switching of external power MOSFETs in demanding electronic applications.
The maximum operating temperature is +125°C.
Yes, the device includes a shutdown function.
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