SICPT40120YA-BP

Single Diodes Overview

The SICPT40120YA is a Silicon Carbide Schottky Barrier Rectifier manufactured by Micro Commercial Components. It features a 1200V peak repetitive reverse voltage and a 40A average forward current rating. The device utilizes a TO-247AD through-hole package with a thermal resistance of 0.34°C/W from junction to case. Maximum power dissipation reaches 440W at a case temperature of 25°C, while the non-repetitive peak forward surge current is rated at 280A for a 10ms half-sine pulse. Operating junction temperatures range from -55°C to +175°C.

Single Diodes Feature Summary

• Temperature-independent performance characteristics
• Essentially zero switching losses and forward recovery voltage
• Positive temperature coefficient for parallel operation stability
• High-frequency operation capability

Single Diodes Applications

• Switching power supplies
• Power factor correction circuits
• Motor drive systems
• Traction applications
• Charging piles

Single Diodes Procurement Notes

Verify authenticity by purchasing directly from Micro Commercial Components or authorized distributors to avoid counterfeit parts. Confirm the BP suffix indicates RoHS compliance and bulk packaging containing 360 pieces per box. Ensure the specific part number matches the datasheet exactly, as MCC reserves the right to modify products without notice. Validate that the component meets UL 94 V-0 flammability ratings and halogen-free requirements before integration.

Single Diodes Selection Notes

Select this component for high-voltage applications requiring low heat dissipation and minimal switching losses. The positive temperature coefficient facilitates safe parallel operation for higher current handling. Evaluate thermal management based on the 0.34°C/W junction-to-case resistance and derating curves. Consider the 1200V rating for robustness against voltage spikes in industrial and traction environments.

Single Diodes Part Context

This silicon carbide rectifier belongs to MCC's high-performance power semiconductor portfolio designed for efficiency-critical systems. Utilizing SiC technology allows for superior thermal conductivity and faster switching compared to traditional silicon devices. The TO-247AD package provides mechanical robustness for through-hole mounting in demanding industrial and automotive-grade power electronics assemblies.

Single Diodes Replacement Considerations

Cross-reference electrical parameters such as 1200V VRRM, 40A IF, and TO-247AD package dimensions when evaluating alternatives. Verify that substitute components maintain similar thermal resistance and forward voltage characteristics to ensure system compatibility.