Single FETs, MOSFETs SICW080N120H-BP product image

SICW080N120H-BP

$3.31
  • Description:SIC MOSFET,TO-247AB
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tube

SKU:5906cc19223c Category: Brand:

  
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SICW080N120H-BP is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists MCC (Micro Commercial Components). Its product description is SIC MOSFET,TO-247AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SICW080N120H-BP

  • Description:SIC MOSFET,TO-247AB
  • Series:-
  • Mfr:MCC (Micro Commercial Components)
  • Package:Tube
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):1200 V
  • Current - Continuous Drain (Id) @ 25°C:33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):20V
  • Rds On (Max) @ Id, Vgs:110mOhm @ 15A, 20V
  • Vgs(th) (Max) @ Id:4.5V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs:131 nC @ 20 V
  • Vgs (Max):+25V, -10V
  • Input Capacitance (Ciss) (Max) @ Vds:2644 pF @ 800 V
  • FET Feature:-
  • Power Dissipation (Max):224W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247AB
  • Package / Case:TO-247-3

Single FETs, MOSFETs datasheet and documents for SICW080N120H-BP

SICW080N120H-BP

Single FETs, MOSFETs Overview

The SICW080N120H-BP is a Silicon Carbide (SiC) MOSFET manufactured by Micro Commercial Components. It features an N-channel enhancement mode configuration housed in a TO-247AB-3 through-hole package. Key electrical parameters include a drain-source breakdown voltage (VDS) of 1200 V and a continuous drain current (ID) of 33 A at case temperature. The device exhibits a maximum on-resistance (RDS(on)) of 134 mΩ, with a gate charge (QG) of 131 nC. It operates within a junction temperature range of -55°C to +175°C and supports a power dissipation of 224 W.

Single FETs, MOSFETs Feature Summary

  • Utilizes silicon carbide semiconductor technology for high-efficiency switching
  • Designed for through-hole mounting in robust TO-247AB packages
  • Capable of operating at elevated temperatures up to 175°C

Single FETs, MOSFETs Applications

  • High-power motor drive systems
  • Industrial automation equipment
  • Traction converters

Single FETs, MOSFETs Procurement Notes

Verify availability directly with the manufacturer or authorized distributors, as this component may be subject to special order status. Confirm specific ordering requirements and lead times prior to procurement. Ensure compatibility with your bill of materials and supply chain constraints before finalizing purchase orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high-voltage handling and low conduction losses. The TO-247AB package facilitates effective thermal management for high-power applications. Consider the 1200 V rating and 33 A current capacity against your system's peak load requirements and thermal design capabilities.

Single FETs, MOSFETs Part Context

This part belongs to the Micro Commercial Components SiC MOSFET family. It is engineered for modern power electronics that demand superior performance over traditional silicon devices. The TO-247AB form factor ensures mechanical stability and ease of integration into standard heatsink assemblies used in industrial and automotive sectors.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists from Micro Commercial Components for verified alternatives. Ensure any replacement matches the 1200 V rating, TO-247AB package, and electrical characteristics to maintain circuit integrity and safety standards.

SICW080N120H-BPSICW080N120H-BP
$3.31
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