SICW40C120

Diode Arrays Overview

The SICW40C120 is a dual anode common cathode Silicon Carbide Schottky diode manufactured by Diotec Semiconductor. It features a repetitive peak reverse voltage (VRRM) of 1200 V and a maximum average forward rectified current (IFAV) of 40 A per device or 20 A per diode at TC = 140°C. The typical forward voltage (VF) is less than 1.8 V at IF = 20 A and Tj = 25°C, with a total capacitive charge (QC) of approximately 80 nC. The junction temperature range spans from -50°C to +175°C.

Diode Arrays Feature Summary

• Dual diode configuration for efficient power conversion
• Extremely fast switching characteristics with low capacitive charge
• High reverse voltage rating suitable for demanding environments
• Compliant with RoHS, REACH, and Conflict Minerals standards

Diode Arrays Applications

• Rectification of high frequencies
• High efficient switching stages
• Power Factor Correction Diodes
• Free-wheeling diodes for inverters

Diode Arrays Procurement Notes

Verify the specific suffix requirements before ordering. The standard version is commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while -AQ denotes qualification. Confirm package type availability as both TO-247 and TO-3P are referenced in documentation. Ensure thermal management aligns with the specified mounting torque and case temperature limits.

Diode Arrays Selection Notes

Select this component for applications requiring high-frequency rectification and low switching losses. The dual configuration simplifies circuit design for bridge or center-tapped topologies. Consider the thermal resistance values when designing heat sinks, noting the distinction between per-device and per-diode ratings. Verify that the operating junction temperature remains within the specified -50°C to +175°C range for reliable performance.

Diode Arrays Part Context

This part belongs to the SICW series of Silicon Carbide Schottky diodes from Diotec Semiconductor. The series utilizes SiC substrate technology to achieve superior performance compared to traditional silicon devices. The SICW40C120 specifically targets high-power applications where efficiency and thermal stability are critical, offering robust surge current capabilities and minimal reverse recovery effects.

Diode Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

Diode Arrays FAQ

What is the difference between the -Q and -AQ suffixes?

The -Q suffix indicates the device is AEC-Q101 compliant, while the -AQ suffix signifies that it has undergone AEC-Q101 qualification.

How is the average forward current rated?

The maximum average forward rectified current is 40 A per device (parallel operation) or 20 A per diode, measured at a case temperature of 140°C.

What is the typical capacitive charge value?

The total capacitive charge (QC) is typically 80 nC, measured at Tj = 25°C, VR = 800 V, IF = 20 A, and di/dt = -200 A/µs.