SIGC42T60NCX1SA6

Overview

The SIGC42T60NC is a 600 V NPT technology IGBT chip designed for integration into discrete modules. It features a 100 µm die size with a 6.5 x 6.5 mm² raster and supports a DC collector current of 50 A at 25 °C, peaking at 150 A pulsed. The device exhibits a positive temperature coefficient for easy paralleling. Key electrical parameters include a saturation voltage of 1.7 V to 2.5 V at 50 A, a threshold voltage of 4.5 V to 6.5 V, and switching times of 43 ns turn-on delay and 130 ns turn-off delay under specified inductive load conditions.

Feature Summary

• Utilizes Non-Punch-Through (NPT) technology for robust performance
• Features a positive temperature coefficient to facilitate safe parallel operation
• Designed specifically as an internal chip for IGBT module assembly

Applications

• Industrial motor drives
• Power conversion systems
• IGBT module manufacturing

Procurement Notes

Verify the specific ordering code Q67041-A4692-A001 against your Bill of Materials. Confirm that the component is treated as a raw semiconductor chip rather than a finished package. Ensure storage requirements are met, including dry nitrogen environments and strict adherence to shelf life limits to maintain material integrity before die bonding.

Selection Notes

Select this chip when designing custom IGBT modules requiring 600 V blocking capability and 50 A continuous current handling. The NPT architecture provides high thermal stability compared to punch-through designs. Consider the 100 µm thickness and emitter metallization compatibility when selecting die attach materials and wire bonding processes for your specific module topology.

Part Context

This component is part of Infineon's portfolio of bare IGBT chips intended for internal use within power modules. It serves as the core switching element for applications demanding reliable high-voltage control. The datasheet references the FS 50 R06 YL4 module data sheet for system-level context, indicating its role in established industrial power electronics architectures.

Replacement Considerations

No direct public substitute part numbers are documented for this specific bare chip configuration. Module integrators typically design around specific chip geometries; therefore, alternative sourcing requires verifying identical die dimensions, metallization layers, and electrical characteristics to ensure mechanical and functional compatibility.

FAQ

What is the recommended die bonding method for this chip?

The datasheet specifies that the chip is suitable for both electrically conductive glue and soft solder die bonding.

How does the positive temperature coefficient benefit module design?

It allows for easy paralleling of multiple chips within a module by naturally balancing current distribution as temperature increases.

What is the maximum operating junction temperature?

The maximum operating junction and storage temperature range is -55 °C to +150 °C.