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Product Detailed Parameters
- Description：IGBT NPT 600V 75A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：225 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 75A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：65ns/170ns
- Test Condition：300V, 75A, 3Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
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Overview
The SIGC61T60NC is a standalone NPT-technology IGBT chip designed for integration into power modules. It features a 600V collector-emitter voltage rating and supports a maximum DC collector current of 75A at 25°C, with a pulsed current capability of 225A. The device utilizes a 100µm thick die with dimensions of 6.99 x 8.79 mm². Key electrical characteristics include a saturation voltage (VCE(sat)) of up to 2.5V at 75A and 15V gate drive, and switching times of 65ns turn-on delay and 170ns turn-off delay under specified inductive load conditions.
Feature Summary
- Utilizes Non-Punch Through (NPT) technology for robust performance
- Features positive temperature coefficient for safe parallel operation
- Short-circuit proof design capability
- Suitable for epoxy and soft solder die bonding
Applications
- Industrial motor drives
- Power module assembly
- High-voltage switching applications
Procurement Notes
Verify the specific ordering suffix against Infineon documentation, as suffixes may indicate variations in packaging or handling. Confirm that the component meets all necessary safety standards for the intended application environment. Ensure proper electrostatic discharge precautions are observed during storage and handling due to the device's sensitivity.
Selection Notes
Select this chip when designing IGBT modules requiring 600V blocking capability and high current density. Consider the thermal management requirements associated with the 75A continuous current rating. Evaluate the mechanical compatibility of the 100µm thickness and die size with existing module substrates and bonding processes.
Part Context
This component belongs to Infineon's portfolio of discrete IGBT chips intended for internal use within larger power electronic assemblies rather than direct end-user circuit mounting. It serves as a fundamental building block for constructing intelligent power modules and hybrid packages used in industrial automation and energy conversion systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers must consult official Infineon resources or contact technical support directly to identify compatible alternatives or next-generation replacements for this specific chip configuration.
