SIHF22N60E-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIHF22N60E-GE3 is a single N-channel Power MOSFET from the E Series, housed in a TO-220 FULLPAK package. It features a drain-source voltage (VDS) of 600 V and a continuous drain current (ID) of 21 A at 25 °C case temperature. The maximum on-state resistance (RDS(on)) is 0.18 Ω at VGS = 10 V. Key dynamic parameters include a total gate charge (Qg) of 86 nC maximum and an avalanche energy rating (EAS) of 367 mJ. The device operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Avalanche energy rated for unclamped inductive switching applications
• Optimized figure-of-merit combining low on-resistance and gate charge
• Reduced switching and conduction losses through low input capacitance

Single FETs, MOSFETs Applications

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• High-intensity discharge lighting
• Industrial motor drives and welding equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance status. The GE3 designation indicates lead-free and halogen-free construction, while the E3 variant denotes lead-free materials only. Ensure the component matches the required thermal and electrical specifications for the target circuit design before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust avalanche capability and efficient switching performance. The TO-220 FULLPAK package provides effective heat dissipation for through-hole mounting. Evaluate the thermal resistance and derating curves to ensure the junction temperature remains within safe operating limits under expected load conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix E Series Power MOSFETs, designed for general-purpose high-voltage switching. The series emphasizes efficiency improvements via reduced gate charge and optimized RDS(on). The TO-220 FULLPAK form factor is standard for medium-power industrial and consumer electronics applications.

Single FETs, MOSFETs Replacement Considerations

Consult official datasheets for direct pin-compatible alternatives with matching voltage and current ratings. Verify that any substitute maintains equivalent avalanche energy ratings and thermal characteristics to ensure circuit reliability without redesign.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy rating?

The device is rated for a single pulse avalanche energy (EAS) of 367 mJ under specified test conditions.

How does the on-state resistance vary with temperature?

The drain-source on-state resistance increases as the junction temperature rises, following the normalized thermal impedance characteristics provided in the typical performance graphs.