SIHG47N60AEF-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIHG47N60AEF-GE3 is an N-channel enhancement mode power MOSFET from the EF Series, housed in a TO-247AC package. It features a drain-source voltage (VDS) of 600 V and a continuous drain current (ID) of 40 A at 25 °C case temperature. The typical on-state resistance (RDS(on)) is 0.061 Ω at VGS = 10 V and ID = 23.5 A, with a maximum of 0.070 Ω. Total gate charge (Qg) has a maximum rating of 189 nC at VGS = 10 V. The device supports a maximum power dissipation of 313 W and operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Ultra-low gate charge and low input capacitance for reduced switching losses
• Low figure-of-merit (FOM) combining Ron and Qg for optimized efficiency
• Rated for repetitive avalanche energy (UIS)
• Integrated fast body diode with controlled reverse recovery characteristics

Single FETs, MOSFETs Applications

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction (PFC) circuits
• High-intensity discharge (HID) lighting
• Industrial motor drives and welding equipment

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking the manufacturer's marking code against official datasheet documentation. Confirm RoHS compliance status through the provided Vishay material categorization links. Ensure ordering suffixes match the required lead-free and halogen-free specifications. Validate thermal management requirements based on the specified junction-to-case thermal resistance ratings before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring efficient switching performance. The low RDS(on) minimizes conduction losses, while the optimized gate charge reduces drive power requirements. Consider the TO-247AC package for robust through-hole mounting and effective heat dissipation. Evaluate the avalanche energy rating if inductive load protection is necessary without external clamping components.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix EF Series, designed specifically for high-efficiency power conversion. It utilizes advanced silicon technology to achieve superior figures-of-merit compared to standard MOSFETs. The series targets demanding industrial and commercial power supply environments where thermal efficiency and switching speed are critical design parameters.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must maintain the 600 V VDS rating and compatible TO-247AC footprint. Verify that substitute devices meet or exceed the 40 A continuous current capability and similar RDS(on) thresholds. Check gate charge specifications to ensure driver compatibility. Note that pinout configurations may vary between manufacturers even within the same package style.