SIHP25N60EFL-GE3

$4.75

Description：MOSFET N-CH 600V 25A TO220AB
Series：E
Mfr：Vishay Siliconix
Package：Tube

SKU:73447c45faa1 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIHP25N60EFL-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 600V 25A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIHP25N60EFL-GE3

Description：MOSFET N-CH 600V 25A TO220AB
Series：E
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：146mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：75 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2274 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：250W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for SIHP25N60EFL-GE3

SIHP25N60EFL-GE3

Single FETs, MOSFETs Overview

The SiHP25N60EFL-GE3 is a Vishay Siliconix N-channel power MOSFET in the E Series, housed in a TO-220AB package. It features a drain-source voltage of 600 V and a continuous drain current of 25 A at 25 °C case temperature. The typical on-state resistance (RDS(on)) is 0.127 Ω at VGS = 10 V. Total gate charge is rated at a maximum of 75 nC. Maximum power dissipation is 250 W, with an operating junction temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Incorporates fast body diode technology utilizing E series architecture for reduced reverse recovery time and charge.
Features low input capacitance and optimized figure-of-merit to minimize switching and conduction losses.
Rated for unclamped inductive switching (UIS) avalanche energy to enhance operational robustness.

Single FETs, MOSFETs Applications

Server and telecommunications power supplies
ATX computing power supplies
Industrial welding and induction heating systems
String photovoltaic inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm manufacturing location compliance. Confirm RoHS and halogen-free status requirements prior to procurement. Ensure thermal management solutions align with the specified linear derating factor and maximum junction-to-case thermal resistance ratings.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring low gate charge and fast body diode performance. Evaluate the trade-off between RDS(on) and Qg for efficiency optimization. Verify that the required continuous drain current remains within limits when accounting for actual case temperatures and derating curves.

Single FETs, MOSFETs Part Context

This device belongs to the Vishay Siliconix E Series Power MOSFET lineup. It is designed specifically for applications demanding improved switching characteristics and reduced figure-of-merit compared to standard silicon MOSFETs. The product utilizes advanced trench technology to achieve lower on-resistance and faster recovery times.