ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 3A SOT23-6L
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3A
- Rds On (Max) @ Id, Vgs：90mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.5nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds：365pF @ 10V
- Power - Max：1.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：SOT-23-6L
- Grade：-
- Qualification：-
Download product information
Overview
The SIL2623A-TP is a dual P-channel MOSFET array manufactured by Micro Commercial Components. It utilizes Trench LV technology and is housed in an SOT-23-6L surface-mount package. The device supports a drain-source voltage of -30V and a continuous drain current of -3A at 25°C. Key electrical parameters include a maximum on-resistance of 90mΩ at VGS=-10V and ID=-3A, with a gate threshold voltage ranging from -1.0V to -2.5V. Total power dissipation is rated at 1.25W, and the operating junction temperature range spans from -55°C to +150°C.
Feature Summary
- Dual P-channel configuration utilizing trench low-voltage MOSFET technology for efficient switching performance.
- RoHS compliant construction featuring halogen-free materials and epoxy meeting UL 94 V-0 flammability ratings.
- Moisture Sensitivity Level 1 classification ensures stability during standard surface mount assembly processes.
Applications
- Power management circuits requiring dual P-channel switching capabilities
- Low voltage load switch applications
- Battery protection and management systems
Procurement Notes
Verify component authenticity by sourcing exclusively from authorized Micro Commercial Components distributors or direct channels. Confirm RoHS compliance and Halogen-free status through official documentation. Ensure storage conditions adhere to Moisture Sensitivity Level 1 guidelines to prevent package damage prior to soldering. Validate part markings against the provided datasheet specifications.
Selection Notes
Select this component for designs requiring a compact dual P-channel solution within an SOT-23-6L footprint. Evaluate thermal constraints carefully as total power dissipation is limited to 1.25W based on junction-to-ambient resistance. Ensure gate drive voltages remain within the ±20V limit while confirming that the required on-resistance meets system efficiency targets at specific current loads.
Part Context
This device belongs to the SIL2623 series of dual MOSFET arrays produced by Micro Commercial Components. It serves as a specialized discrete semiconductor solution designed for space-constrained printed circuit board layouts. The product line emphasizes high reliability and environmental compliance for modern electronic manufacturing requirements.
Replacement Considerations
Consult official manufacturer substitution guides for verified equivalents. Cross-reference pinout configurations and electrical limits before integrating alternative components into existing designs.
FAQ
What is the maximum gate-source voltage rating?
The absolute maximum rating for gate-source voltage is ±20V.
Does the device support reverse recovery characteristics?
Yes, the internal body diode exhibits a typical reverse recovery time of 12ns and a charge of 4.4nC.
How is the thermal performance defined?
The junction-to-ambient thermal resistance is specified as 100°C/W when mounted on a 1in² FR-4 board with 2oz copper in still air.
