SIR5607DP-T1-RE3

$3.03

Description：P-CHANNEL 60 V (D-S) MOSFET POWE
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:71e302464b00 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIR5607DP-T1-RE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is P-CHANNEL 60 V (D-S) MOSFET POWE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIR5607DP-T1-RE3

Description：P-CHANNEL 60 V (D-S) MOSFET POWE
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：22.2A (Ta), 90.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：112 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5020 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：6.25W (Ta), 104W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SO-8
Package / Case：PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SIR5607DP-T1-RE3

SIR5607DP-T1-RE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SiR5607DP is a P-channel power MOSFET utilizing TrenchFET® Gen V technology. It features a -60 V drain-source voltage rating and a maximum on-resistance of 0.007 Ω at VGS = -10 V. The device supports a continuous drain current of up to -90.9 A at TC = 25 °C, with a total gate charge of 112 nC max at VGS = -10 V. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a leadless PowerPAK® SO-8 package.

Single FETs, MOSFETs Feature Summary

TrenchFET® Gen V p-channel architecture for minimized conduction loss
100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
Leadless PowerPAK® SO-8 surface mount package design

Single FETs, MOSFETs Applications

Adapter and charger switch circuits
Battery protection modules
Load switch implementations
Motor drive control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance attributes such as halogen-free status or lead-free composition. Confirm that the requested part number matches the exact package type and thermal characteristics required for the target application environment before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component based on its low RDS(on) specifications and high current handling capabilities suitable for power management applications. Ensure the gate drive voltage aligns with the specified thresholds for optimal performance. Evaluate the thermal requirements against the provided junction-to-case and junction-to-ambient resistance ratings to determine adequate heatsinking needs.

Single FETs, MOSFETs Part Context

This single N-channel MOSFET belongs to the Vishay Siliconix TrenchFET® family, designed for efficient power switching. It utilizes advanced trench gate technology to achieve superior on-resistance characteristics compared to standard planar devices. The component is engineered for robust performance in demanding electronic environments requiring high reliability.