SIRA00DP-T1-RE3

$0.60

Description：MOSFET N-CH 30V 100A PPAK SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)

SKU:998fad456d08 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIRA00DP-T1-RE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 30V 100A PPAK SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIRA00DP-T1-RE3

Description：MOSFET N-CH 30V 100A PPAK SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：220 nC @ 10 V
Vgs (Max)：+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds：11700 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：104W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SO-8
Package / Case：PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SIRA00DP-T1-RE3

SIRA00DP-T1-RE3

Single FETs, MOSFETs Overview

The SIRA00DP-T1-RE3 is a single N-channel 30 V MOSFET utilizing TrenchFET Gen IV technology. It features a maximum drain-source voltage of 30 V and a continuous drain current of 100 A at TC = 25 °C. The device exhibits a typical on-state resistance of 830 µΩ at VGS = 10 V and 1.1 mΩ at VGS = 4.5 V. Total gate charge is typically 66 nC at VGS = 10 V. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a leadless PowerPAK SO-8 package.

Single FETs, MOSFETs Feature Summary

TrenchFET Gen IV power MOSFET architecture
Leadless PowerPAK SO-8 surface-mount package
100% Rg and UIS tested for reliability

Single FETs, MOSFETs Applications

Synchronous rectification
High power density DC/DC converters
VRMs and embedded DC/DC applications

Single FETs, MOSFETs Procurement Notes

Verify the ordering suffix RE3 against GE3, as they denote different compliance or packaging variations. Confirm the specific reel quantity requirements with the manufacturer. Ensure the component matches the exact Vishay Siliconix part number to avoid functional discrepancies. Validate RoHS and REACH compliance status directly from the official datasheet before integration.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low on-resistance in a compact footprint. The PowerPAK SO-8 package offers thermal performance comparable to larger packages while maintaining standard SO-8 dimensions. Evaluate thermal management strategies based on the specified junction-to-case resistance. Consider the gate charge characteristics for switching frequency optimization.

Single FETs, MOSFETs Part Context

This part belongs to the SiRA series of N-channel MOSFETs from Vishay Siliconix. The series utilizes advanced TrenchFET technology to achieve high current handling capabilities in small surface-mount packages. The PowerPAK SO-8 form factor allows for direct substitution into existing standard SO-8 layouts while providing improved thermal dissipation.