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SIW20C065 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Diotec Semiconductor. Its product description is SIW20C065. Review the specifications below when checking this part for your BOM.
The DIW065SIC015 is a Silicon Carbide (SiC) MOSFET manufactured by Diotec Semiconductor. It features an N-channel enhancement mode configuration housed in a TO-247-3L through-hole package. Key electrical parameters include a drain-source breakdown voltage of 650 V and a continuous drain current rating of 150 A. The device exhibits a maximum on-resistance of 15 mΩ at room temperature, with a gate threshold voltage of 4 V. It supports a wide operating junction temperature range from -55°C to +175°C and offers a power dissipation capacity of 550 W.
Verify component authenticity against official Diotec Semiconductor documentation before integration. Confirm that the specific ordering suffix matches the required pinout and packaging specifications. Ensure compliance with RoHS directives and check for any recent product change notices regarding material composition or manufacturing location updates.
Evaluate the 15 mΩ on-resistance against system efficiency targets to minimize conduction losses. Consider the 650 V breakdown voltage to ensure adequate safety margins for bus voltages. Assess the thermal resistance requirements based on the 550 W dissipation capability and the intended heatsinking strategy within the application enclosure.
This component belongs to Diotec's portfolio of wide-bandgap power semiconductors. It represents a shift toward silicon carbide devices to replace traditional silicon MOSFETs in applications demanding higher frequency operation and superior thermal management capabilities.
Consult official Diotec cross-reference lists for verified substitutes. Do not assume functional equivalence with generic SiC MOSFETs due to potential differences in gate charge characteristics and thermal resistance profiles.
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