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Product Detailed Parameters
- Description:A 4.8 MM POWER CONTROL SWITCH W
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR),Cut Tape (CT)
- Switch Type:General Purpose
- Number of Outputs:1
- Ratio - Input:Output:1:01
- Output Configuration:High Side
- Output Type:N-Channel
- Interface:-
- Voltage - Load:-
- Voltage - Supply (Vcc/Vdd):4.5V ~ 13.2V
- Current - Output (Max):4A
- Rds On (Typ):15mOhm
- Input Type:CMOS
- Features:-
- Fault Protection:-
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Supplier Device Package:18-STQFN (1.6x3)
- Package / Case:18-PowerUFQFN
- Grade:-
- Qualification:-
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Overview
The SLG59H1127V is a high-performance, self-powered N-channel power control switch designed for general-purpose power management. It features a proprietary MOSFET design with a typical on-resistance of 15 mΩ and supports output currents up to 4 A. The device operates within a voltage range of 4.5 V to 12 V and is housed in an 18-STQFN package measuring 1.6 x 3 mm.
Feature Summary
- Self-powered operation eliminates the need for external gate drive circuitry
- Proprietary low-profile MOSFET design minimizes footprint and resistance
- High-side switching capability for efficient power rail management
Applications
- General-purpose power distribution in embedded systems
- Power sequencing for multi-rail logic circuits
- Load switching in portable consumer electronics
Procurement Notes
Verify the specific suffix 'V' against the manufacturer's current datasheet to confirm pinout and thermal specifications. Ensure the ordering part number matches the required tape-and-reel or cut-tape packaging format. Cross-reference the RoHS compliance status with the latest environmental declaration provided by Renesas Electronics Corporation before finalizing procurement.
Selection Notes
Select this component when a compact, self-driven high-side switch is required for 4.5 V to 12 V rails. The 15 mΩ on-resistance suits applications demanding low conduction loss. The 18-STQFN package is ideal for space-constrained designs. Verify that the load current does not exceed the 4 A rating under expected thermal conditions.
Part Context
This device belongs to the GreenFET family of power switches from Renesas. It integrates a high-side N-channel MOSFET with built-in protection features. The self-powered architecture simplifies system design by removing the complexity associated with traditional discrete MOSFET drivers.
Replacement Considerations
Check for direct pin-compatible alternatives such as the SLG59H1013V if higher voltage tolerance (up to 26.4 V) is required. Ensure any substitute maintains the 18-STQFN package and similar on-resistance characteristics.
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