— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC PWR SWITCH N-CHANNEL 1:1 8DFN
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR),Cut Tape (CT)
- Switch Type:General Purpose
- Number of Outputs:2
- Ratio - Input:Output:1:01
- Output Configuration:High Side
- Output Type:N-Channel
- Interface:-
- Voltage - Load:-
- Voltage - Supply (Vcc/Vdd):2.5V ~ 5.5V
- Current - Output (Max):1A
- Rds On (Typ):80mOhm
- Input Type:CMOS
- Features:-
- Fault Protection:-
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Supplier Device Package:8-STDFN (1x1.6)
- Package / Case:8-UFDFN
- Grade:-
- Qualification:-
Download product information
Overview
The SLG59M1512V is a dual-channel power switch IC designed for load switching applications. It features two independent channels, each rated for 1.0 A output current with an on-resistance of 80 mΩ. The device incorporates an integrated charge pump to facilitate high-side switching capabilities. It operates within a supply voltage range of 2.5 V to 5.5 V and supports surface-mount installation in an 8-STDFN package.
Feature Summary
- Dual-channel architecture providing independent control over two separate loads
- Integrated charge pump enables efficient high-side switching operation
- Current-limited protection mechanisms safeguard connected circuits against overload conditions
Applications
- Load switching in portable electronic devices
- Power distribution management in embedded systems
- Battery-powered equipment requiring controlled power sequencing
Procurement Notes
Verify the specific suffix and tape-and-reel specifications against the manufacturer's latest datasheet before ordering. Confirm that the 8-STDFN footprint matches your PCB layout requirements. Ensure input voltage levels remain within the 2.5 V to 5.5 V operational range to maintain proper charge pump functionality and channel performance.
Selection Notes
Select this component when dual independent high-side switching is required in space-constrained designs. The 80 mΩ on-resistance offers a balance between conduction loss and cost for 1 A applications. Consider the integrated charge pump as a key differentiator for driving N-channel MOSFETs without external bootstrap components.
Part Context
This part belongs to the GreenFET family from Renesas, focusing on compact power distribution solutions. It serves as a specialized load switch alternative to discrete MOSFET configurations, offering integrated protection and control features in a minimal footprint suitable for modern consumer and industrial electronics.
Replacement Considerations
Check for direct pin-compatible alternatives within the SLG59M series. Verify if single-channel variants or higher-current options better suit specific design needs. Ensure any substitute maintains comparable on-resistance and charge pump integration for equivalent performance.
ChipApex | Global Electronic Components Supplier







