SMBT3904PNE6327HTSA1

Overview

The SMBT3904PNE6327HTSA1 is a dual NPN silicon switching transistor array manufactured by Infineon Technologies. It features a PG-SOT23-6 surface-mount package with six terminals. The device supports a maximum collector current of 200 mA per element and a collector-emitter voltage of 40 V. Key electrical parameters include a transition frequency of 300 MHz, a DC current gain (hFE) range of 100 to 300, and a maximum power dissipation of 250 mW. The component operates within a temperature range of -65°C to +150°C junction temperature.

Feature Summary

• Dual NPN configuration in a compact SMD package
• High-speed switching capability with 300 MHz transition frequency
• Wide operating temperature range for industrial applications

Applications

• General-purpose signal switching circuits
• Logic level translation interfaces
• Driver stages for low-power loads

Procurement Notes

Verify the specific suffix PNE6327HTSA1 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Confirm RoHS compliance status and check for end-of-life notices prior to procurement planning.

Selection Notes

Select this component when a dual NPN configuration is required in a small footprint. Ensure the 200 mA continuous current rating and 250 mW power dissipation meet the thermal requirements of the target application design.

Part Context

This part belongs to the SMBT3904 series of fast-switching transistors. It serves as a dual-element alternative to single NPN devices like the SMBT3904, allowing for space-efficient circuit designs requiring two matched NPN transistors in one package.

Replacement Considerations

Check for direct substitutes such as the SMBT3904PNH6327XTSA1 or other dual NPN arrays from Infineon with identical pinouts and electrical ratings.