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The SMBT3904PNH6327XTSA1 is a dual bipolar junction transistor (BJT) manufactured by Infineon Technologies. It integrates NPN and PNP transistors in a single SOT-363-6 surface-mount package. The device utilizes silicon technology and supports operation within a temperature range of -55°C to +150°C. Key electrical specifications include a maximum DC collector current of 200 mA, a collector-emitter voltage (VCEO) of 40 V, and a collector-base voltage (VCBO) of 40 V. The emitter-base voltage (VEBO) is rated at 6 V. The component features a power dissipation capacity of 250 mW and a transition frequency (fT) of 300 MHz. It holds AEC-Q100 qualification for automotive applications.
Verify the specific ordering suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with automated pick-and-place equipment regarding the SOT-363-6 form factor. Confirm that the AEC-Q100 qualification meets the specific reliability requirements of the target application environment before finalizing procurement.
Select this component when a compact solution for both NPN and PNP switching is required in a single package. The 300 MHz transition frequency makes it suitable for moderate-speed digital applications. Consider the 250 mW power dissipation limit and thermal management requirements for the SOT-363-6 package during circuit design.
This part belongs to the SMBT series of dual bipolar transistors from Infineon Technologies. It serves as a surface-mount alternative to through-hole discrete pairs, offering space savings in dense PCB layouts. The H6327 suffix typically denotes specific packaging and handling characteristics defined by the manufacturer for volume production.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameters against potential alternatives such as other dual BJT packages if direct replacement is necessary.