SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The SMBT3906SE6327 is a PNP silicon switching transistor manufactured by Infineon Technologies, belonging to the SMBT3906 series. It is housed in a SOT-363-6 surface-mount package and features a maximum collector current of 200 mA and a collector-emitter voltage rating of 40 V. The device exhibits a transition frequency of 250 MHz and a maximum power dissipation of 330 mW. DC current gain ranges from 100 to 300, with a maximum collector cutoff current of 50 nA. The component operates within a junction temperature range up to 150°C and complies with RoHS standards.
Verify the specific suffix E6327 against official Infineon documentation to confirm package type and compliance status. Confirm availability status as some sources indicate this variant may be discontinued or subject to limited distribution channels. Ensure compatibility with required thermal management solutions given the 330 mW power dissipation limit.
Select this component when a PNP transistor with 40V breakdown and 200mA continuous current is required in a dual-transistor compatible footprint. Compare electrical characteristics such as hFE range and saturation voltage against alternative BJT families if higher gain or lower leakage is needed. Verify that the SOT-363-6 pinout matches the target PCB layout requirements.
This part is part of the SMBT3906 family, which includes complementary NPN variants like the SMBT3904. The 'S' designation typically indicates a specific tape-and-reel packaging format or internal manufacturing lot code defined by Infineon. It serves as a standard discrete replacement for legacy TO-92 packaged transistors in modern surface-mount assembly processes.
Direct substitutes include other PNP transistors in SOT-363 packages with similar 40V/200mA ratings, such as those from ON Semiconductor or Diodes Inc. Verify pinout compatibility and thermal resistance values before substitution.