SMBT3906SH6327XTSA1

Overview

The SMBT3906SH6327XTSA1 is a PNP silicon switching transistor from Infineon Technologies, part of the SMBT3906 series. It features a maximum collector-emitter voltage (VCEO) of 40 V and a continuous collector current (IC) of 200 mA. The device operates with a total power dissipation of up to 330 mW at a case temperature of 71°C or lower, and supports junction temperatures up to 150°C. Electrical characteristics include a DC current gain (hFE) ranging from 30 to 300 depending on collector current, and a transition frequency (fT) of 250 MHz. The component is housed in an SOT-23 package and complies with AEC-Q101 automotive standards.

Feature Summary

• High DC current gain suitable for various amplification and switching applications
• Low collector-emitter saturation voltage for efficient operation
• Qualified according to AEC-Q101 automotive standards

Applications

• General-purpose switching circuits
• Amplifier stages requiring high current gain
• Automotive electronic systems

Procurement Notes

Verify the specific ordering suffix SH6327XTSA1 against official Infineon documentation to confirm packaging details and reel specifications. Ensure compliance with RoHS requirements and check for any specific handling instructions related to the SOT-23 surface-mount package during assembly.

Selection Notes

Select this component when a PNP transistor with a 40 V breakdown voltage and 200 mA current capability is required. Consider the thermal resistance and power dissipation limits relative to the operating environment. Verify that the SOT-23 package dimensions fit the PCB layout constraints and that the hFE range meets the circuit design requirements.

Part Context

This component belongs to the SMBT3906 series of PNP silicon switching transistors. It is designed as a complementary type to the NPN SMBT3904. The series offers robust performance in small packages, making it suitable for space-constrained designs. The SH6327XTSA1 variant specifically denotes the packaging and tape-and-reel configuration for automated assembly.

Replacement Considerations

Direct replacements may include other PNP transistors with similar VCEO, IC, and package specifications. Verify pinout compatibility and electrical parameters such as hFE and saturation voltage before substitution. Consult Infineon's official documentation for approved alternative part numbers.