SMBT3946DW1T1G

SMBT3946DW1T1G

$0.13
  • Description:TRANS NPN/PNP 40V 0.2A SC88/SC70
  • Series:-

SKU:9930d227edff Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN/PNP 40V 0.2A SC88/SC70
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
  • Power - Max:150mW
  • Frequency - Transition:300MHz, 250MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SC-88/SC70-6/SOT-363
  • Grade:Automotive
  • Qualification:AEC-Q101

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SMBT3946DW1T1G

Overview

The SMBT3946DW1T1G is a dual complementary bipolar junction transistor (BJT) array manufactured by onsemi. It integrates one NPN and one PNP transistor within a single SOT-363-6 surface-mount package. The device supports a maximum continuous collector current of 200 mA and withstands a collector-emitter voltage (VCEO) of 40 V. Key electrical parameters include a collector-base voltage (VCBO) ranging from 40 V to 60 V and an emitter-base voltage (VEBO) between 5 V and 6 V. Power dissipation is rated at 150 mW, with a gain-bandwidth product (fT) specified at 300 MHz for the NPN and 250 MHz for the PNP element. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Dual complementary configuration combining NPN and PNP transistors in a compact footprint
  • Automotive-grade qualification compliant with AEC-Q100 standards
  • Silicon technology designed for general-purpose switching applications

Applications

  • General-purpose signal switching circuits
  • Driver stages for low-power loads
  • Complementary logic interface circuits

Procurement Notes

Verify the specific ordering suffix to ensure correct packaging format, as variants exist with different reel or cut-tape specifications. Confirm that the required batch meets AEC-Q100 automotive reliability standards if the application demands it. Cross-reference the manufacturer part number against official distributor catalogs to validate authenticity and traceability before finalizing procurement orders.

Selection Notes

Select this component when space-constrained designs require matched NPN/PNP pairs. Ensure the circuit design accounts for the 150 mW power dissipation limit and the 200 mA current rating. Verify that the 40 V breakdown voltage aligns with the system's supply rails. Consider the SOT-363 thermal characteristics for adequate heat management in enclosed environments.

Part Context

This device belongs to the MBT3946DW1T1 series of dual complementary transistors. It serves as a direct replacement for other industry-standard small-signal dual BJTs in similar packages. The part is widely used in portable electronics and industrial control systems where board space is limited but complementary switching functionality is necessary.

Replacement Considerations

The MBT3946DW1T2G is a confirmed substitute part number within the same family. Both parts share identical electrical characteristics and pin configurations. Verify that the alternative variant meets the same AEC-Q100 qualification requirements if applicable to the target application.

SMBT3946DW1T1GSMBT3946DW1T1G
$0.13
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