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The SMMBF4393LT1G is an N-channel JFET switching transistor manufactured by onsemi. It features a maximum Drain-Source Voltage (VDS) of 30 Vdc and a Gate-Source Breakdown Voltage (V(BR)GSS) of 30 Vdc. The device has a Zero-Gate-Voltage Drain Current (IDSS) range of 5.0 to 30 mAdc at VDS = 15 Vdc. Static Drain-Source On-Resistance (rDS(on)) is specified at 100 Ohms for ID = 1.0 mAdc. Total Device Dissipation is 225 mW, with a Junction Temperature Range of -55 to +150 °C.
Verify the specific ordering suffix 'S' indicates automotive qualification and unique site requirements. Confirm package type is SOT-23 (TO-236). Ensure compliance with Pb-Free and RoHS standards matches project specifications. Check shipping configuration for tape and reel quantities.
Select this component when low leakage current and high breakdown voltage are required in a small surface-mount package. The S-prefix variant is necessary for automotive supply chain requirements. Compare IDSS ranges against circuit biasing needs to ensure proper turn-off characteristics.
This part belongs to the MMBF439xL family of N-channel JFETs. It shares the same pinout and general electrical limits as MMBF4391LT1G and MMBF4392LT1G but differs in IDSS and rDS(on) parameters. The S-prefix denotes automotive-grade manufacturing.
Direct functional substitutes within the same family include MMBF4391LT1G and MMBF4392LT1G, though IDSS values differ. Non-automotive equivalents are MMBF4393LT1G without the S-prefix.
The device marking code is M6G.
No, the S-prefix indicates automotive qualification and manufacturing site controls; the electrical characteristics remain identical to the commercial version.
The maximum forward gate current (IG(f)) is 50 mAdc.